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1. Utsource will inspect the goods, including appearance inspection (no serious damage to the appearance), select qualified and honest suppliers, and ensure 98% qualification rate.
2. Some parts are tested by machine.
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Description
IC SRAM 16MBIT PARALLEL 48TSOP I
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Features
● TSOP l Configurable as 1M x 16 or as 2M x 8 SRAM
● Very high speed: 45 ns
● Wide voltage range: 2.2V - 3.6V
● Ultra-low active power
— Typical active current: 2 mA @ f = 1 MHz
— Typical active current: 18.5 mA @ f = fMax(45 ns speed)
● Ultra-low standby power
● Easy memory expansion with CE1,CE2 and OE features
● Automatic power-down when deselected
● CMOS for optimum speed/power
● Available in Pb-free and non Pb-free 48-ball VFBGA and 48-pin TSOPI package
Functional Description
The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by`16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected(CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins(I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE,BLE HIGH), or during a Write operation (CE1 LOW, CE2 HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enables(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O8 through l/O15) is written into the location specified on the address pins (A0 through A19).
Reading from the device is accomplished by taking Chip Enables (CE1, LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is Low, then data from the memory location specified by the address pins will appear on l/O0 to l/O7. If Byte High Enable (BHE) is Low, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of Read and Write modes.
Preview of the first 3 pages of the data sheet
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11/20/2017
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All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
CY62167DV30LL-55ZXI
CY62167DV30LL-55ZXI has several brands around the world that may have alternate names for CY62167DV30LL-55ZXI due to regional differences or acquisition. CY62167DV30LL-55ZXI may also be known as the following names:
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