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MJE344 This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE344

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Description

This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

Not found, similar datasheet recommended

Title

0.5 A, 200 V NPN Bipolar Power Transistor

  • ECAD Module
  • Manufacturer Part Number: MJE344G
  • Brand: Rochester Electronics Llc
  • DateCode: 05+
  • Package / Case: TO-126
  • Category: Discrete Semiconductor
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
  • Transistor Type: NPN
  • Supplier Device Package: TO-225AA
  • Series: -
  • Power - Max: 20W
  • Other Names: MJE344GOS
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Manufacturer Standard Lead Time: 2 Weeks
  • Lead Free Status / RoHS Status: Lead free / RoHS Compliant
  • Frequency - Transition: 15MHz
  • Detailed Description: Bipolar (BJT) Transistor NPN 200V 500mA 15MHz 20W Through Hole TO-225AA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Current - Collector Cutoff (Max): 1mA
  • Current - Collector (Ic) (Max): 500mA
Similar Models MJE253 MJE340

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ECAD Module

Product Attributes

  • Description: The MJE344 is a silicon NPN epitaxial planar transistor designed for use in general purpose amplifier and switching applications. Features: -Collector-Emitter Voltage: VCEO = 80V -Collector-Base Voltage: VCBO = 80V -Emitter-Base Voltage: VEBO = 5V -Collector Current: IC = 1A -Power Dissipation: PD = 1.5W -Operating and Storage Junction Temperature Range: -55°C to +150°C Applications: -General purpose amplifier -Switching applications -Motor control -High voltage applications (For reference only)

Preview of the first 3 pages of the data sheet

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  • MJE344's pdf picture 2
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This device is useful for medium voltage applications requiring high fT such as converters and extended range amplifiers. Features

Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Total Power Dissipation

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, = 0) Collector Cutoff Current (VCE = 200 Vdc, = 0) Collector Cutoff Current (VCB = 200 Vdc, = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, = 0)

DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 50 mAdc, = 5.0 mAdc) Base-Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)

Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, = 10 MHz)
Small-Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, = 1.0 kHz)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 1. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation then the curves indicate.

The data of Figure 1 is based on TJ(pk) TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown.

IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA) Figure 3. "On" Voltages

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL.

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

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limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC

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surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

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