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Description
The PNP Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Title
0.5 A, 300 V PNP Bipolar Power Transistor
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● SGS-THOMSON PREFERRED SALESTYPES
● COMPLEMENTARY PNP - NPN DEVICES
APPLICATIONS
● LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium power linear and switching applications.It is mounted in SOT-32.
The complementary PNP type is MJE350.
Preview of the first 3 pages of the data sheet
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This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
FeaturesHigh Collector-Emitter Sustaining Voltage Excellent DC Current Gain Complement to MJE340 These Devices are Pb-Free and are RoHS Compliant*
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
= Year = Work Week = Device Code = Pb-Free PackageThere are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red.
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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10000 buyer reviews from United States
Brian Taylor
Length of registration:7 years
The testing result for the Intergrated Circuits MJE350G ordered from Utsource website was satisfactory. The device was tested for its electrical characteristics and performance, and the results were within the expected range. The device was found to be in good working condition and it was able to perform its intended functions. The testing also revealed that the device was able to meet the specifi
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03/17/2023
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MJE350
MJE350 has several brands around the world that may have alternate names for MJE350 due to regional differences or acquisition. MJE350 may also be known as the following names:
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Unit Price:0.19558
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