IRFB4310ZPBF Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

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IRFB4310ZPBF

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Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon Motor Control MOSFET Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Channel Type: N
Brand: Infineon Technologies AG
DateCode: 23+
Package / Case: TO-220
Maximum Continuous Drain Current: 127 A
Maximum Drain Source Voltage: 100 V
Maximum Drain Source Resistance: 6 mΩ
Maximum Gate Threshold Voltage: 4V
Minimum Gate Threshold Voltage: 2V
Maximum Gate Source Voltage: -20 V, +20 V
Package Type: TO-220AB
Mounting Type: Through Hole
Transistor Configuration: Single
Pin Count: 3
Channel Mode: Enhancement
Category: Power MOSFET
Maximum Power Dissipation: 250 W
Typical Input Capacitance @ Vds: 6860 pF@ 50 V
Typical Gate Charge @ Vgs: 120 nC @ 10 V
Minimum Operating Temperature: -55 °C
Typical Turn-On Delay Time: 20 ns
Transistor Material: Si
Number of Elements per Chip: 1
Width: 4.83mm
Dimensions: 10.67 x 4.83 x 9.02mm
Typical Turn-Off Delay Time: 55 ns
Maximum Operating Temperature: +175 °C
Series: HEXFET
Height: 9.02mm
Length: 10.67mm

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Web Site	Package	Brand	Est. Market Price	Description
Texas Instruments (TI)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
STMicroelectronics (ST)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
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Mouser	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
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The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！

Product Attributes

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 25A	4.0		5.0	mΩ
Gate Charge	QG			73		nC
Input Capacitance	Ciss	VDS = 0V, f = 1MHz		2640		pF
Output Capacitance	Coss	VDS = 100V, f = 1MHz		280		pF
Reverse Transfer Capacitance	Crss	VDS = 100V, f = 1MHz		2360		pF
Threshold Voltage	VGS(th)	ID = 250μA	2.0		4.0	V
Continuous Drain Current	ID	TC = 25°C		59		A
Pulse Drain Current	IDpeak	tp = 10ms, TC = 25°C		230		A
Power Dissipation	PD	TC = 25°C		110		W
Junction Temperature	TJ		-55		150	°C

Instructions for Use:

Mounting and Handling:
- Handle the IRFB4310ZPBF with care to avoid damage to the leads and body.
- Ensure proper mounting to a heatsink if operating at high power levels.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Ensure VGS does not exceed the maximum ratings to prevent damage.
Thermal Management:
- Monitor junction temperature (TJ) to stay within the operational limits.
- Use appropriate thermal management techniques like heatsinks or cooling fans as necessary.
Electrical Connections:
- Verify all connections are secure and correct before applying power.
- Ensure the device is properly isolated from other circuit components to prevent short circuits.
Storage and Environment:
- Store in a dry, cool place away from direct sunlight and corrosive substances.
- Avoid exposure to environments that exceed the specified temperature and humidity ranges.
Testing:
- When testing, adhere to the test conditions outlined in the parameter table for accurate measurements.
- Use compatible equipment and settings for testing parameters such as capacitance and charge.

(For reference only)

Type N channel of FET type
Technology MOSFET (metal oxide)
Leakage source voltage (Vdss) 100V
- continuous drain current (Id) (25 ° C) 120 a (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V
Vgs (th) at different ids (th) (maximum) 4V 150
Gate Charge (Qg) (Max) Vgs 170nC
Voltage Coupled to Gate Charge (Qg) (Max) Vgs 10V
Vgs (maximum) plus or minus 20V
The Input Capacitance (Ciss) 6860 pf Vds (Max)
Voltage Coupled to the Input Capacitance (Ciss) 50 v Vds (Max)
FET function -
Power dissipation (maximum) 250W (Tc)
Different ids, Rds On (Max) at Vgs 6 millio, 75A, 10V
Working temperature and 55 ° C to 175 ° C (TJ)
Install type through hole
Supplier components package TO-220AB
Package/shell TO-220-3

QUANTITY	UNIT PRICE	PLUS UNIT PRICE	TOTAL PRICE
≥1:	US $2.68380	US $2.52277	US $2.52277

Substitute (equivalent) Product

Substitute Product	Description
IRFB4110PBF	N-Channel MOSFET, 100V, 180A, 3.7mΩ, TO-220AB package, suitable for high current applications.
STP75NF75	N-Channel MOSFET, 75V, 80A, 6.5mΩ, TO-220 package, optimized for low on-resistance.
IRLZ44NPBF	N-Channel MOSFET, 55V, 47A, 22mΩ, TO-220 package, ideal for logic level drive applications.
IRF3205	N-Channel MOSFET, 55V, 110A, 8mΩ, TO-220 package, versatile and robust for automotive use.
FQP30N06	N-Channel MOSFET, 60V, 30A, 32mΩ, TO-220 package, commonly used in switching circuits.
IPP200N25N3G	N-Channel MOSFET, 250V, 200A, 3.3mΩ, TO-220 package, designed for high efficiency performance.
IXFH50N20	N-Channel MOSFET, 200V, 50A, 0.06Ω, TO-220 package, suitable for fast switching applications.
APT34F100B	N-Channel MOSFET, 1000V, 34A, 0.47Ω, TO-220 package, used in power factor correction circuits.
P75NF75	N-Channel MOSFET, 75V, 80A, 0.009Ω, TO-220 package, characterized by low on-resistance.
STB55NF06	N-Channel MOSFET, 60V, 50A, 18mΩ, D2PAK package, ideal for automotive and industrial use.

Product Usage

The IRFB4310ZPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It's particularly known for its high current capacity, low on-resistance, and fast switching characteristics. Here are some typical applications where the IRFB4310ZPBF might be used:

Power Supply Units (PSUs):
- Switching power supplies and DC-DC converters often use MOSFETs like the IRFB4310ZPBF for their efficiency and fast switching.
Motor Control:
- In motor drive circuits, such as those found in electric vehicles, industrial automation, and robotics, this MOSFET can be used for controlling the power delivered to the motors.
Inverters:
- Used in inverters for renewable energy systems like solar inverters and wind turbines, where efficient DC to AC conversion is critical.
RF Amplifiers:
- In RF (Radio Frequency) applications, such as RF power amplifiers in communication equipment, where efficiency and power handling are key.
Battery Management Systems (BMS):
- In electric vehicle battery management systems for managing the charging and discharging cycles efficiently.
Lighting Control:
- Used in high-power LED drivers and other lighting control circuits that require efficient power regulation.
Audio Amplifiers:
- Employed in Class D audio amplifiers where efficiency and fast switching are necessary for high-fidelity sound reproduction.
Uninterruptible Power Supplies (UPS):
- Incorporated in UPS systems where reliable power switching is essential to maintain operation during power outages.
Consumer Electronics:
- Used in high-power consumer electronics, including TVs, gaming consoles, and other devices requiring efficient power management.
Telecommunications:
- In telecommunications equipment where reliable and efficient power handling is necessary.

When designing a circuit with the IRFB4310ZPBF, key electrical characteristics such as the maximum drain-source voltage (Vds), gate threshold voltage (Vgs(th)), and total gate charge (Qg) must be considered to ensure the MOSFET operates within its specified limits. Proper heatsinking and thermal management are also essential due to high power dissipation in many applications.

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IRFB4310ZPBF Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon Motor Control MOSFET Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

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IRFB4310ZPBF

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