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IRFP3710PBF

MOSFET N-CH 100V 57A TO-247AC

39

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  • Encapsulation: TO-247
  • Brand: International Rectifier
  • DateCode: 15+
  • Drain Current (Max): 57 A
  • Frequency (Max): Not Required MHz
  • Gate-Source Voltage (Max): ±20(V)
  • Output Power (Max): Not Required W
  • Power Dissipation: 200(W)
  • Mounting: Through Hole
  • Noise Figure: Not Required dB
  • Drain-Source On-Res: 0.025(ohm)
  • Operating Temp Range: -55C to 175C
  • Package Type: TO-247AC
  • Pin Count: 3 +Tab
  • Polarity: N
  • Type: Power MOSFET
  • Number of Elements: 1
  • Operating Temperature Classification: Military
  • Channel Mode: Enhancement
  • Drain Efficiency: Not Required %
  • Drain-Source On-Volt: 100(V)
  • Power Gain : Not Required dB
  • Rad Hardened: No
  • Continuous Drain Current: 57(A)
  • DELETED: Compliant
  • ≥1: US $1.83007 US $1.72026
  • ≥100: US $1.60131 US $1.50523
  • ≥500: US $1.57386 US $1.47943
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FET type N channel.
Technology MOSFET (metal oxide)
Drain source voltage (Vdss) 100V.
- continuous drain current (Id) (at 25 ° C) 57 a (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V.
Vgs (th) (maximum) (maximum) 4V 250 m A.
Grid charge (Qg) at different Vgs (maximum) 190nC 10V.
Voltage Coupled to Gate Charge (Qg) (Max) Vgs 10V.
Vgs (maximum) plus or minus 20V.
Input capacitance (Ciss) at different Vds (maximum) 3000pF 25V.
Voltage Coupled to the Input Capacitance (Ciss) 25 v Vds (Max)
FET function
Power dissipation (maximum) 200W (Tc)
Rds On (maximum) 25 millio 28A, 10V at Vgs.
Working temperature and 55 ° C to 175 ° C (TJ)
Install type through hole.
Supplier device package TO-247AC.
Package/shell TO-247-3.
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