MOSFET P-CH 55V 18A DPAK
- Encapsulation: TO-252
- Brand: International Rectifier
- DateCode: 17+
- Channel Type: P
- Maximum Continuous Drain Current: 18 A
- Maximum Drain Source Voltage: 55 V
- Maximum Drain Source Resistance: 110 mΩ
- Maximum Gate Threshold Voltage: 4V
- Minimum Gate Threshold Voltage: 2V
- Maximum Gate Source Voltage: -20 V, +20 V
- Package Type: DPAK (TO-252)
- Mounting Type: Surface Mount
- Transistor Configuration: Single
- Pin Count: 3
- Channel Mode: Enhancement
- Category: Power MOSFET
- Maximum Power Dissipation: 57 W
- Width: 6.22mm
- Number of Elements per Chip: 1
- Typical Input Capacitance @ Vds: 650 pF @ -25 V
- Typical Turn-Off Delay Time: 20 ns
- Minimum Operating Temperature: -55 °C
- Length: 6.73mm
- Dimensions: 6.73 x 6.22 x 2.39mm
- Transistor Material: Si
- Series: HEXFET
- Typical Turn-On Delay Time: 12 ns
- Height: 2.39mm
- Typical Gate Charge @ Vgs: 32 nC @ 10 V
- Maximum Operating Temperature: +150 °C
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Technology MOSFET (metal oxide)
Leakage source voltage (Vdss) 55V.
- continuous drain current (Id) (at 25 ° C) 18 a (Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V.
Vgs (th) (maximum) (maximum) 4V 250 m A.
Grid charge (Qg) (maximum) 32nC 10V for different Vgs.
Voltage Coupled to Gate Charge (Qg) (Max) Vgs 10V.
Vgs (maximum) plus or minus 20V.
Input capacitance (Ciss) at different Vds (maximum) 650pF 25V.
Voltage Coupled to the Input Capacitance (Ciss) 25 v Vds (Max)
FET function -
Power dissipation (maximum) 57W (Tc)
Different Id, Rds On (maximum) 110 millio 9.6A, 10V at Vgs.
Working temperature and 55 ° C to 150 ° C (TJ)
Install type surface mount.
The supplier device encapsulates d-pak.
Package/shell TO-252-3, DPak (2 lead + patch), sc-63.
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Stock Status: 49100
Total products: 621Total sales: 1234
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