SIHG47N60E-GE3 N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

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SIHG47N60E-GE3

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N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses

Channel Type: N
Brand: Vishay Siliconix
DateCode: 22+
Package / Case: TO-247
Maximum Continuous Drain Current: 47 A
Maximum Drain Source Voltage: 600 V
Maximum Drain Source Resistance: 64 mΩ
Minimum Gate Threshold Voltage: 2V
Maximum Gate Source Voltage: -20 V, +20 V
Package Type: TO-247AC
Mounting Type: Through Hole
Pin Count: 3
Transistor Configuration: Single
Channel Mode: Enhancement
Category: Power MOSFET
Maximum Power Dissipation: 357 W
Height: 20.7mm
Series: E Series
Maximum Operating Temperature: +150 °C
Length: 15.87mm
Dimensions: 15.87 x 5.31 x 20.7mm
Transistor Material: Si
Typical Turn-On Delay Time: 24 ns
Minimum Operating Temperature: -55 °C
Typical Gate Charge @ Vgs: 147 nC @ 10 V
Typical Input Capacitance @ Vds: 4810 pF @ 100 V
Typical Turn-Off Delay Time: 94 ns
Width: 5.31mm
Number of Elements per Chip: 1

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Web Site	Package	Brand	Est. Market Price	Description
Texas Instruments (TI)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
STMicroelectronics (ST)	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
DigiKey	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
Mouser	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出
RS America	DIP-18	STMicro electronics	$2.55	单电源双运算放大器，电源范围3V至32V，短路保护输出单电源双运算放大器，电源范围3V至32V，短路保护输出

The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！

Product Attributes

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	70	-	mΩ @ ID=25A, VGS=10V	On-resistance at specified conditions
Gate Charge	Qg	-	113	-	nC	Total gate charge
Input Capacitance	Ciss	-	4800	-	pF	Input capacitance at zero bias
Output Capacitance	Coss	-	690	-	pF	Output capacitance at zero bias
Reverse Transfer Capacitance	Crss	-	140	-	pF	Reverse transfer capacitance at zero bias
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	47	A	Continuous drain current at TJ = 25°C
Pulse Drain Current	IDM	-	-	150	A	Non-repetitive peak drain current
Power Dissipation	PD	-	-	100	W	Maximum power dissipation at TC = 25°C
Junction Temperature	TJ	-	-	150	°C	Maximum junction temperature

Instructions for SIHG47N60E-GE3

Handling and Storage:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid damage to the leads and body.
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation.
- Use appropriate mounting hardware to secure the device.
Electrical Connections:
- Connect the source (S), drain (D), and gate (G) terminals correctly according to the circuit diagram.
- Apply sufficient gate drive voltage (typically 10V or higher) to ensure low on-resistance.
Operational Guidelines:
- Do not exceed the maximum ratings provided in the table.
- Ensure that the junction temperature does not exceed 150°C.
- For reliable operation, keep within the recommended operating conditions.
Testing:
- Test the device in a controlled environment to verify performance parameters.
- Use caution when testing high-voltage and high-current capabilities.

(For reference only)

SIHG47N60E-GE3 Description

The SIHG47N60E-GE3 is an advanced N-Channel Power MOSFET designed for high-performance power management applications. This component offers superior efficiency and reliability, making it ideal for use in switch-mode power supplies, motor control systems, and other industrial equipment that requires robust power switching capabilities.

Key Features

High voltage rating suitable for demanding applications
Low on-resistance (R_DS(on)) for minimized conduction losses
Fast switching speeds to enhance overall system efficiency
Robust design ensuring excellent thermal performance

Parameters of SIHG47N60E-GE3

Parameter	Value	Unit
Drain-Source Voltage (V_DSS)	600	V
Continuous Drain Current (I_D)	47	A
Pulsed Drain Current (I_DM)	188	A
Gate-Source Voltage (V_GS)	±30	V
On-State Resistance (R_DS(on))	0.045	Ω
Power Dissipation (P_tot)	250	W
Operating Junction Temperature (T_J)	-55 to +150	°C
Thermal Resistance, Junction-to-Case (R_θJC)	0.45	°C/W
Package Type	TO-247	-

Applications

Switch-mode power supplies (SMPS)
Motor control systems
Uninterruptible power supplies (UPS)
Inverters and converters

Conclusion

The SIHG47N60E-GE3 is a versatile and reliable power MOSFET that meets the needs of modern power electronics. Its high voltage and current ratings, combined with low on-resistance and efficient thermal management, make it a strong choice for engineers designing advanced power systems.

QUANTITY	UNIT PRICE	PLUS UNIT PRICE	TOTAL PRICE
≥1:	US $8.94600	US $8.05140	US $8.05140

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SIHG47N60E-GE3 Electronic Component
SIHG47N60E-GE3 N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses

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SIHG47N60E-GE3

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