IR2125PBF 500 V High Side Driver IC with typical 1.6 A source and 3.3 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB.

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IR2125PBF

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Description

500 V High Side Driver IC with typical 1.6 A source and 3.3 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB.

Not found, similar datasheet recommended

Title

500 V single high-side gate driver IC with over current protection and fault reporting

ECAD Module
Series: -
Brand: Infineon Technologies AG
Package / Case: DIP8
Packaging: Tube
Part Status: Active
Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 0 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500V
Rise / Fall Time (Typ): 43ns, 26ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: 8-DIP

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ECAD Module

Product Attributes

Description: The IR2125PBF is an integrated gate driver IC with high and low side referenced output channels. It is designed to drive a wide range of power MOSFETs and IGBTs. Features: High and low side referenced output channels Undervoltage lockout (UVLO) Overcurrent protection (OCP) Short circuit protection (SCP) Thermal shutdown (TSD) High peak output current Low propagation delay Low output saturation voltage High noise immunity Applications: Automotive applications Motor control Power supplies Uninterruptible power supplies (UPS) Industrial applications (For reference only)

1. Description

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.

2. Features

> Tolerant to negative transient voltage DV/DT Immune

> Under-voltage lockout

> Current detection and limiting loop to limit driven power transistor current

> Error lead indicates fault conditions and programs shutdown time

> Output in phase with input

3. Product Information

Driver Configuration:	High Side
Peak Output Current:	3.3A
Supply Voltage Min:	0V
Supply Voltage Max:	18V
Driver Case Style:	DIP
No. of Pins:	8Pins
Input Delay:	170ns
Output Delay:	200ns
Operating Temperature Min:	-40°C
Operating Temperature Max:	125°C
Packaging:	Each
Product Range:	-
Module Configuration:	High Side
Device Type:	MOSFET Driver
MSL:	-
Supply Voltage Range:	0V to 18V

Preview of the first 3 pages of the data sheet

Document Preview

Features
Floating channel designed for bootstrap operation Fully operational to +500V

dV/dt immune Gate drive supply range from to 18V Undervoltage lockout Current detection and limiting loop to limit driven

power transistor current Error lead indicates fault conditions and programs
shutdown time Output in phase with input
2.5V, 5V and 15V input logic compatible Also available LEAD-Free
Description
MOSFET and IGBT driver with over-current limiting
mune CMOS technologies enable ruggedized mono-

lithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 2.5V logic. The output driver features a high pulse current

buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the

driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external

capacitor which directly controls the time interval between detection of the over-current limiting conditions and

latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage Error Signal Voltage Current Sense Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation +25°C (8 lead PDIP)

Thermal Resistance, Junction to Ambient (8 lead PDIP)

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Note 1: Logic operational for to +500V. Logic state held for -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

VBIAS (VCC, VBS) 3300 pF and = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figures 3 through 6.

VBIAS (VCC, VBS) = 15V and = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS.

Figure Min. Typ. Max. Units Test Conditions
VIH VIL VCSTH+ VCSTHVOH VOL ILK IQBS IQCC IIN+ IINICS+ ICSVBSUV+

Logic "1" Input Voltage Logic "0" Input Voltage CS Input Positive Going Threshold CS Input Negative Going Threshold High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current "High" CS Bias Current "Low" CS Bias Current VBS Supply Undervoltage Positive Going Threshold

ERR Pull-Down Current Output High Short Circuit Pulsed Current

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Product Reviews

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10000 buyer reviews from United States

Amber King

IR2125PBF

United States

Length of registration:7 years

The IR2125PBF integrated circuit from Utsource is a high-performance, high-efficiency device that is designed to provide reliable control of motor drives. It features a wide range of features, including a wide operating temperature range, low power consumption, and a high-speed switching frequency. This device is ideal for applications that require precise and reliable control of motor drives.

Reply0

03/17/2023

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IR2125PBF 500 V High Side Driver IC with typical 1.6 A source and 3.3 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB.

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IR2125PBF

IR2125PBF has several brands around the world that may have alternate names for IR2125PBF due to regional differences or acquisition. IR2125PBF may also be known as the following names: