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| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Rated Voltage | VDSS | - | 1200 | - | V | |
| Rated Current | ID | - | 450 | - | A | Tc = 25°C |
| Continuous Drain Current | ID(on) | - | 450 | - | A | Tc = 100°C |
| Power Dissipation | PD | - | - | 2800 | W | Tc = 25°C |
| Junction-to-Case Thermal Resistance | Rth(j-c) | - | 0.3 | - | °C/W | |
| Gate Charge | Qg | - | 165 | - | nC | VGS = 15V |
| Input Capacitance | Ciss | - | 3500 | - | pF | VDS = 1000V, VGS = 0V |
| Output Capacitance | Coss | - | 250 | - | pF | VDS = 1000V, VGS = 0V |
| Reverse Transfer Capacitance | Crss | - | 100 | - | pF | VDS = 1000V, VGS = 15V |
| Turn-on Delay Time | tdon | - | 70 | - | ns | VDS = 800V, ID = 450A, VGS = 15V |
| Rise Time | tr | - | 60 | - | ns | VDS = 800V, ID = 450A, VGS = 15V |
| Turn-off Delay Time | tdoff | - | 50 | - | ns | VDS = 800V, ID = 450A, VGS = 0V |
| Fall Time | tf | - | 40 | - | ns | VDS = 800V, ID = 450A, VGS = 0V |
Mounting and Handling:
Electrical Connections:
Gate Drive:
Thermal Management:
Storage and Operating Conditions:
Testing:
Safety Precautions:
High-performance 1200 V, 450 A dual IGBT module with integrated freewheeling diodes and advanced TRENCHSTOP™ IGBT3 technology.
| VCE | 1200 V |
|---|---|
| IC (25°C) | 450 A |
| VCE(sat) | 2.1 V (typ.) |
| Switching Frequency | Up to 10 kHz |
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $372.16300 | US $334.94670 | US $334.94670 |
Substitute (equivalent) Product
Sure, here is the information in a table format with the product names as anchor links:
| Substitute Product | Description |
|---|---|
| FS450R12KE3G | Modular IGBT with similar ratings and configuration. Suitable for high power applications. |
| FF450R12KE3 | Infineon IGBT module, offering high efficiency and reliability for industrial applications. |
| 6MBP200RA060 | Fuji Electric IGBT module, optimized for medium to high power applications. |
| MG150J2YS45 | Toshiba IGBT module, known for its performance in high-frequency switching operations. |
| CM400HA-24H | Mitsubishi IGBT module, suitable for a wide range of industrial power systems. |
This table provides alternate IGBT modules that can be used in place of FS450R12KE3-S1, each having similar or enhanced features suitable for various applications.
Product Usage
The FS450R12KE3-S1 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies, often utilized in a variety of high-power and high-efficiency applications. Some common circuits and systems where this specific IGBT module might be employed include:
Inverters:
Motor Drives:
Power Supplies:
Traction and Railway Systems:
Energy Storage Systems:
Industrial Automation:
HVAC Systems:
The FS450R12KE3-S1 is capable of dealing with high voltages and currents, making it suitable for applications requiring robust and reliable power control. Its usage across diverse sectors emphasizes its versatility and effectiveness in high-power electronics.
Global Logistics Country List
| Flag | Country | Estimated Delivery Time | Minimum First Weight Cost | ||
|---|---|---|---|---|---|
| Express | Standard Shipping | Express (0.5kg) | Standard Shipping (0.05kg) | ||
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FS450R12KE3-S1
FS450R12KE3-S1 has several brands around the world that may have alternate names for FS450R12KE3-S1 due to regional differences or acquisition. FS450R12KE3-S1 may also be known as the following names:
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