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国コードDescription: The MT46V32M16CY-5B:J is a 512Mb (32M x 16) DDR SDRAM, organized as 4 banks of 4M x 16 bits. It is a low-power, high-speed CMOS double data rate (DDR) synchronous DRAM, ideally suited for
在庫:5000
最小数量:1
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Description: The MT41J256M16HA-093G:E is a 256Mb (32M x 8/16M x 16) DDR3 SDRAM from Micron. It is a high-speed, low-power memory device designed for use in a wide range of applications. Features:
在庫:5000
最小数量:1
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Description: The MT29F2G16ABAEAWP-IT:E is a 2 Gb (256M x 8) NAND Flash memory device manufactured by Micron. Features: - 2 Gb (256M x 8) NAND Flash memory - TSOP48 package - Access time: 45ns - Opera
在庫:5000
最小数量:1
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Description: The MX25U6435FM2I-10G is a 64Mb (8M x 8) Serial Flash memory, with advanced write protection mechanisms, accessed by a high-speed SPI-compatible bus. Features: 64Mb (8M x 8) Serial Flas
在庫:10000
最小数量:2
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Description: The AT27C2048-90JU is a 2,097,152-bit CMOS EPROM (Electrically Programmable Read-Only Memory) organized as 262,144 words by 8 bits. Features: - Low power CMOS technology - Fast access ti
在庫:10000
最小数量:1
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Description: 16Mb (1M x 16) CMOS Multi-Purpose Flash Features: - Fast access time: 55ns - Low power consumption - Single power supply: 2.7V to 3.6V - Advanced write protection - High performance CMOS
在庫:5000
最小数量:1
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Description: The MT25QL01GBBB8E12-0SIT is a 1 Gb (128 M x 8) Serial NOR Flash memory device. Features: - Fast random read performance: up to 104 MHz - Fast random write performance: up to 104 MHz
在庫:2000
最小数量:1
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在庫:10000
最小数量:2
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Description: M24M02-DRMN6TP is a Serial Peripheral Interface (SPI) Serial EEPROM Memory manufactured by STMicroelectronics. Features: 2Mbit (256K x 8) memory SPI bus compatible Low power cons
在庫:10000
最小数量:1
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Description: M27W402-100B6 is a 4Mbit (512K x 8) Parallel Flash Memory manufactured by STMicroelectronics. Features: Fast access time: 55 ns Low power consumption Advanced write protection
在庫:10000
最小数量:1
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Manufacturer: ISSI Description: IS62WV25616BLL-55TI is a 256K x 16 bit Low Voltage CMOS Static RAM. Features: Low Voltage Operation: 2.3V to 3.6V Fast Access Time: 55ns Single Cycle Refresh Fully
在庫:10000
最小数量:1
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Description: IS62WV6416BLL-55BLI is a 64Mb (8M x 8/4M x 16) Synchronous Pipelined Burst SRAM manufactured by ISSI. Features: * Operating voltage range of 2.3V to 3.6V * Access time of 55ns * Data ret
在庫:10000
最小数量:1
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MICRON) Description: PC28F00AM29EWLA is a 28F00AM29EWLA Flash Memory manufactured by Micron. It is a BGA package with a capacity of 128Mb. Features: - Low power consumption - High speed read and wr
在庫:5000
最小数量:1
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Description: IS62WV51216BLL-55TLI is a 512K x 16-bit low power CMOS static RAM organized as 32K words by 16 bits. Features: Low power consumption Fast access time: 55ns Single 5V power
在庫:10000
最小数量:1
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Description: The 25AA02E48T-I/SN is a 2Kb (256 x 8) Serial EEPROM device from Microchip. Features: 2Kb (256 x 8) Serial EEPROM Low voltage operation: 1.8V to 5.5V Fast write times: 10ms (typi
在庫:10000
最小数量:2
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在庫:10000
最小数量:1
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Description: The AT24C32D-SSHM-B is an EEPROM memory device manufactured by Atmel. It is a 32Kbit (4K x 8) memory device with an I2C interface. Features: - 32Kbit (4K x 8) memory device - I2C interfa
在庫:10000
最小数量:13
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在庫:10000
最小数量:2
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Description: IS62WV102416DBLL-45TLI is a 16Mb (2M x 8-bit) CMOS Static RAM organized as 2,097,152 words by 8 bits. It is fabricated using ISSI’s high-performance CMOS technology. Features: Fast acc
在庫:5000
最小数量:1
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在庫:10000
最小数量:4
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