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製品の説明
Type = Asipm
Voltage = 600V
Current = 15A
Circuit Configuration = Cib/ci (integrated Module)
Recommended For Designs =
Switching Loss Curves =
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データシートの最初の 3 ページのプレビュー
同じメーカーの部品番号
Some Part number from the same manufacture Powerex, Inc. |
PS11015 Type = Asipm ;; Voltage = 600V ;; Current = 20A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11016 Type = Asipm ;; Voltage = 600V ;; Current = 30A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11017 Type = Asipm ;; Voltage = 600V ;; Current = 50A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11032 Type = Asipm ;; Voltage = 600V ;; Current = 4A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11033 Type = Asipm ;; Voltage = 600V ;; Current = 8A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11034 Type = Asipm ;; Voltage = 600V ;; Current = 15A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11035 Type = Asipm ;; Voltage = 600V ;; Current = 20A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11036 Type = Asipm ;; Voltage = 600V ;; Current = 30A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS11037 Type = Asipm ;; Voltage = 600V ;; Current = 50A ;; Circuit Configuration = Six/seven Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12012-A Type = Asipm ;; Voltage = 1200V ;; Current = 5A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12013-A |
PS12014-A Type = Asipm ;; Voltage = 1200V ;; Current = 10A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12015-A Type = Asipm ;; Voltage = 1200V ;; Current = 15A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12017-A Type = Asipm ;; Voltage = 1200V ;; Current = 20A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12018-A Type = Asipm ;; Voltage = 1200V ;; Current = 25A ;; Circuit Configuration = Cib/ci (integrated Module) ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12032 Type = Asipm ;; Voltage = 1200V ;; Current = 5A ;; Circuit Configuration = Cib/ci ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12033 |
PS12034 Type = Asipm ;; Voltage = 1200V ;; Current = 10A ;; Circuit Configuration = Cib/ci ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12036 Type = Asipm ;; Voltage = 1200V ;; Current = 15A ;; Circuit Configuration = Cib/ci ;; Recommended For Designs = ;; Switching Loss Curves = |
PS12038 Type = Asipm ;; Voltage = 1200V ;; Current = 25A ;; Circuit Configuration = Six/seven Pak ;; Recommended For Designs = ;; Switching Loss Curves = |
PS20341-G Type = Dip-ipm ;; Voltage = 500V ;; Current = 3A ;; Circuit Configuration = Six Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
BCR5PM-8 : Type = Triac ;; Voltage = 600V ;; Current = 5A ;; Package = Obsolete R7201006 : General Purpose Rectifier ( 600-1200 Amperes Average 4400 Volts ) R7200806XXOO : Diodes, Rectifier Semiconductor Module; RECTIFIER 800V 600A Specifications: Diode Type: Standard ; Diode Configuration: Single ; Voltage - DC Reverse (Vr) (Max): 800V ; Current - Average Rectified (Io) (per Diode): 600A ; Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A ; Current - Reverse Leakage @ Vr: 50mA @ 800V ; Reverse Recovery Time (trr): 7µs ; Speed: R7221606ASOO : Diodes, Rectifier Semiconductor Module; RECTIFIER FAST REC 1600V 600A Specifications: Diode Type: Standard ; Diode Configuration: Single ; Voltage - DC Reverse (Vr) (Max): 1600V (1.6kV) ; Current - Average Rectified (Io) (per Diode): 650A ; Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A ; Current - Reverse Leakage @ Vr: 50mA @ 1600V ; Reverse Recovery Time (trr): 2µ ND411622 : 220 A, 1600 V, SILICON, RECTIFIER DIODE Specifications: Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 220000 mA ; Package: POW-R-BLOK-3 ; Pin Count: 3 ; Number of Diodes: 2 R6031222ESYA : 220 A, 1000 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R60, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 220000 mA ; trr: 2 ns ; VRRM: 1000 volts R9GF228ASYA : 800 A, 2200 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R9G, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 800000 mA ; trr: 5 ns ; VRRM: 2200 volts R9GF368ASYA : 800 A, 3000 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R9G, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 800000 mA ; trr: 5 ns ; VRRM: 3000 volts T500078005AQ : 125 A, 700 V, SCR, TO-83 Specifications: VDRM: 700 volts ; VRRM: 700 volts ; IT(RMS): 125 amps ; IGT: 100 mA ; Package Type: TO-83, 2 PIN ; Pin Count: 2 T510048005AQ : 125 A, 400 V, SCR, TO-94 Specifications: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 125 amps ; IGT: 100 mA ; Package Type: HERMETIC SEALED, METAL PACKAGE-3 ; Pin Count: 3 T707033034BY : 400 A, 100 V, SCR Specifications: VDRM: 100 volts ; VRRM: 100 volts ; IT(RMS): 400 amps ; IGT: 150 mA ; Package Type: CASE T70, 3 PIN ; Pin Count: 3 T727034064DN : 625 A, 200 V, SCR Specifications: VDRM: 200 volts ; VRRM: 200 volts ; IT(RMS): 625 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: CASE T72, 3 PIN ; Pin Count: 3 |
同じカテゴリ
Same catergory |
2SC4484 : NPN Epitaxial Planar Silicon Transistor, High-current Driver Application. IRGP450UD2 : Low Voltage < 600 Volts. Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. KTX111T : = General Purpose Transistor ;; Package = TS6. MJ16018 : Transistor High Voltage To-3. MRF951 : Amplifier. RF NPN Transistor. Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure @ 1 GHz Low Noise Figure @ 1GHz Ftau - 8.0 GHz 6v, 30mA Cost Effective Macro X Package : Designed for use in high gain, low noise small-signal amplifiers. Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector. NTE2426 : Silicon Complementary Transistors Darlington Switch. NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch : The NTE2426 and NTE2427 are silicon planer Darlington transistors a SOT89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. Absolute Maximum Ratings: CollectorBase Voltage (Open. PEMD24 : NPN/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm NPN/PNP Resistor-Equipped Transistors (RET). Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications. 05002-1R2CCMB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000012 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.20E-6 microF ; Capacitance Tolerance: 21 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:. ASI1N253 : 1 A, SILICON, SIGNAL DIODE, DO-4. s: Number of Diodes: 1 ; IF: 1000 mA. DZ24091 : 9.1 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. ER8 : RESISTOR, METAL FILM, 0.125 W, 0.1; 0.25; 0.5 %, 25 ppm, 51.1 ohm - 511000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 200 volts ; Operating Temperature: -65 to 155 C (-85 to 311 F). FB30R06W1E3 : 39 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MODULE-23 ; Number of units in IC: 6. IHSM-78321.0UH15% : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND TERMINATION ; Application: General Purpose, High Current ; Inductance Range: 1 microH ; Rated DC Current: 9000 milliamps ; Operating Temperature: -55 to 85 C (-67. KF3N40W : 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 3.4 ohms ; Package Type: SOT223, SOT-223, 4 PIN ; Number of units in IC: 1. PTFA082201F : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: GREEN, H-37260-2, 2 PIN ; Number of units in IC: 1. 2SA1700D : 200 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252. s: Polarity: PNP ; Package Type: TO-252 (DPAK), TO-252, 3 PIN. 82550080 : RESISTOR, VOLTAGE DEPENDENT, 11 V, 0.1 J, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, 0805, ROHS COMPLIANT ; Operating DC Voltage: 11 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F). |
Japan からの 44 件のバイヤーレビュー
hirabayashi makoto
Length of registration:2 years
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Tsuyoshi Shimizu
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satisfaction
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07/29/2021
Mitsunaga Saito
Length of registration:6 years
OK.best friend
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09/15/2020
Satoshi Shibuichi
Length of registration:3 years
Works fine!
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Length of registration:7 years
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Length of registration:8 years
Very satisfied with
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05/03/2020
Shoichi Wakaguri
Length of registration:7 years
Very Good Quality MASKS!
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goro miyake
Length of registration:9 years
OK.
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Kazumori Tanaka
Length of registration:11 years
They are very good goods. Thank you!!
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Length of registration:7 years
good job thanks!
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07/01/2016
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PS11014
PS11014には世界中にいくつかのブランドがあり、地域の違いや買収によりPS11014の別名が付けられる場合があります。 PS11014は次の名前でも知られています。
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