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Utsource 인증 중고 부품은 다음과 같은 보증을 제공합니다.
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제품서술
Power Transistor Module
이 사이트에 사용 된 모든 제품 이름, 상표, 브랜드 및 로고는 해당 소유자의 재산입니다. 이러한 이름, 상표, 브랜드 및 로고가있는 제품의 묘사, 설명 또는 판매는 식별 목적으로 만 사용되며 권리 보유자와의 관계 또는 승인을 나타 내기위한 것이 아닙니다.
동일한 제조업체의 일부 부품 번호
Some Part number from the same manufacture Fuji Electric Corp. |
2DI30D-050A Power Transistor Module |
2DI50D-050A |
2DI75D-050A |
2FI100A Fast Recovery Diode Module |
2FI100A-030C |
2FI100F Fast Recovery Diode Module |
2FI100F-030C |
2FI100G Fast Recovery Diode Module |
2FI100G-100C |
2FI200A-060 Fast Recovery Diode Module |
2FI200A-060C |
2FI50A Fast Recovery Diode Module |
2FI50A-030C |
2FI50F Fast Recovery Diode Module |
2FI50F-030C |
2FI50G Fast Recovery Diode Module |
2FI50G-100C |
2KBP005G 2 Amp Glass Passivated Silicon Bridge Rectifier |
2KBP01G |
2KBP02G |
2KBP04G |
2RI100E-060 : General Purpose Diode Modules CS71SERIES : Standard Cell Standard Cell FAR-F5CM-942M50-B270 : Saw Filter ( 700 to 1000 MHZ ) MBM29DL324BD-80PFTR : 32m ( 4m X 8/2m X 16 ) Bit Dual Operation RY-4.5WFZ-K : MB90387SPMT : 16-bit Proprietary Microcontroller CMOS MB90F357EPMC1 : 16-bit Proprietary Microcontrollers FCN-247D026-E : FOR Board-to-cable Connection MB95F156JPMT-GE1 : Embedded - Microcontroller Integrated Circuit (ics) External Tray 2.4 V ~ 5.5 V; IC MCU FLASH 32K ROM 48LQFP Specifications: Program Memory Size: 32KB (32K x 8) ; RAM Size: 1K x 8 ; Number of I /O: 39 ; Package / Case: 48-LQFP ; Speed: 16MHz ; Oscillator Type: External ; Packaging: Tray ; Program Memory Type: FLASH ; EEPROM Size: - ; Core Processor: F²MC-8FX ; Data Converters: A/D 8x8/10b ; Core S MB90F346ESPF : 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 24 MHz ; ROM Type: Flash ; Supply Voltage: 4.5 to 5.5 volts ; I/O Ports: 82 ; Package Type: LFQP, Other, PLASTIC, LQFP-100 ; Operating Range: Industrial ; Pin Count: 100 ; Operating Temperature: -40 to 105 C (-40 to 221 F) ; MB90F952MDSPMC : 16-BIT, FLASH, 32 MHz, MICROCONTROLLER, PQFP100 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 32 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 80 ; Package Type: QFP, Other, 14 X 20 MM, 3.35 MM HEIGHT, 0.65 MM PITCH, PLASTIC, QFP-100 ; Operating Range: Industrial ; Pin Count: 100 ; Operating Temp 2MBI200UC-120 : 300 A, 1200 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Package Type: MODULE-7 ; Number of units in IC: 2 |
같은 카테고리
Same catergory |
2SC3284 : Amplifier. Silicon NPN Epitaxial Planar Transistor. Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=10V, f=1MHz . 2SC4020 : . Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO PC Tj Tstg +150 (Ta=25°C) Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=10V, f=1MHz Collector-Emitter Saturation Voltage V CE(s (V ) Base-Emitter Saturation Voltage B =5) 1 Without Heatsink. ASAT25 : . The ASI ASAT25 is Designed for General Purpose Class Operations to 1.7 GHz. Internal Input/Output Matching Network 25 W/1.7 GHz OmnigoldTM Metalization System IC VCBO VCEO VEBO PDISS TJ TSTG °C 3.5 °C/W . CPH3114 : . Applications Relay drivers, lamp drivers, motor drivers. Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. s Parameter Collector-to-Base Voltage Collector-to-Emitter. FX50SMJ-03 : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory. MJ16110 : NPN Silicon Power Transistors. . specifically designed for use in half bridge and full bridge off line converters. Rating Symbol MJ16110 MJW16110 Unit Vdc Adc CollectorEmitter Sustaining Voltage VCEO(sus) VCES 650 6 CollectorEmitter Breakdown Voltage EmitterBase Voltage VEBO IC ICM IB IBM PD Collector Current Continuous Pulsed (1) Base Current Continuous Pulsed (1) Total Power. SB20-05F : . Applications High frequency rectification (switching regulators, converters, choppers). Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=20ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. s Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage. PBLS6022D : 60 V, 1.5 A PNP BISS Loadswitch PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.. PSMN034-100BS : N-channel 100 V 34.5 M„¦ Standard Level MOSFET In D2PAK. Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.. 08051A100BAT4A : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.00001 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface. DB2X415 : 3 A, 40 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: HALOGEN FREE AND ROHS COMPLIANT, MINI2-F4-B, 2 PIN ; Number of Diodes: 1 ; VRRM: 40 volts ; IF: 3000 mA ; trr: 0.0250 ns ; RoHS Compliant: RoHS. M39018/03-0605 : CAP,AL2O3,3.3MF,7VDC,10% -TOL,30% +TOL. Type 105 °C Military Grade, Axial Leaded, Aluminum Type 057 capacitors are the commercial equivalent MIL-C-39018/03 (CU17) types and are ideal for high reliability, long life and high temperature applications. Long life High Ripple High Temperature s +105 °C Capacitance 10% ESR 125% of limit DCL 100% of limit +105 °C Capacitance 10% ESR 100% of limit. PN5114 : P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92. s: Polarity: P-Channel ; rDS(on): 75 ohms ; Package Type: TO-92, TO-92, 3 PIN ; Number of units in IC: 1. RCSCBK : RESISTOR, CURRENT SENSE, 0.05 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP, ROHS COMPLIANT ; Resistance Range: 0.0500 ohms ; Operating Temperature: -55 to 125 C (-67 to 257 F). 1008HQ-10NXGBD : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 1600 milliamps ; Operating Temperature: -40 to 125 C (-40 to 257 F). 111SF180K100TT : CAP,CERAMIC,18PF,100VDC,10% -TOL,10% +TOL,-15,15% TC,0202 CASE. s: Dielectric: Ceramic Composition. 2SK3114B-S17-AY : 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 2.2 ohms ; PD: 2000 milliwatts ; Package Type: TO-220, LEAD FREE, TO-220, MP-45F, 3 PIN ; Number of units in IC: 1. 450MXC100M20X45 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 450 V, 100 uF, THROUGH HOLE MOUNT. s: : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 450 volts ; Leakage Current: 636 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F). 50SQ060GPBF : 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-204AR. s: Rectifier Configuration / Technology: Schottky ; Package: LEAD FREE, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 60 volts ; IF: 5000 mA ; RoHS Compliant: RoHS. 82PF120PBF : 80 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB. s: Package: DO-5, PLASTIC, DO-5, 1 PIN ; Number of Diodes: 1 ; VRRM: 1200 volts ; IF: 80000 mA ; RoHS Compliant: RoHS. |
South Korea의 138 구매자 리뷰
Alvise
Length of registration:3 years
As in the description and the experiment is ongoing
0
0
회답0
11/11/2022
Jozef
Length of registration:2 years
I received the items required in a very short period of time. Thank You
0
0
회답0
09/22/2022
Choi, Sun Bong
Length of registration:2 years
satisfaction
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0
회답0
11/15/2021
Yang Jin Lee
Length of registration:2 years
Very satisfied with
0
0
회답0
08/23/2021
Jung Jae Duk
Length of registration:6 years
I have received it well.
0
0
회답0
07/26/2019
S. K. Kim
Length of registration:13 years
Good
0
0
회답0
01/31/2018
Kyoungheon Yang
Length of registration:15 years
satisfaction
0
0
회답0
12/01/2017
yu byoung jin
Length of registration:6 years
THANK YOU~
0
0
회답0
11/07/2017
NANO SOLTECH
Length of registration:7 years
Good parts.
0
0
회답0
02/08/2017
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일반적으로 소포 배송일로부터 60 일 이내에 반품이 완료됩니다.
결함 (부적합 제품에 대한 제 3 자 품질 보고서를 제공하십시오)
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모든 UTSOURCE 구매에는 60 일의 환불 환불 정책과 제조 결함에 대한 90 일의 UTSOURCE 보증이 포함됩니다.이 보증은 고객 조립이 잘못되어 고객이 지시를 따르지 않아서 결함이 발생한 품목, 제품 수정에는 적용되지 않습니다. , 부주의하거나 부적절한 작동.
2DI200D-100
2DI200D-100에는 지역적 차이 또는 인수로 인해 2DI200D-100의 대체 이름이있을 수있는 여러 브랜드가 있습니다. 2DI200D-100은 (는) 다음 이름으로도 알려져 있습니다.
구매 옵션
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단가:74.44500
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