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Description: GreenPAK Programmable Mixed-Signal Matrix with In-System Programmability Features: Low Power Consumption In-System Programmability Low Voltage Operation High Integration Low Cost Fl
Depósito:10000
Mínimo:2
Favorita
Depósito:5000
Mínimo:1
Favorita
Depósito:10000
Mínimo:10
Favorita
Depósito:10000
Mínimo:2
Favorita
The TC7W14FU,LF(B) is a low-voltage CMOS logic inverter. It is a single-channel device that can be used to invert a logic signal. Features: Low-voltage operation: 1.65 V to 3.6 V Low power consumpt
Depósito:10000
Mínimo:11
Favorita
Depósito:10000
Mínimo:2
Favorita
The TLP550(F is a photocoupler manufactured by Toshiba. It is a DIP-8 package that contains a phototransistor and an infrared LED. Description: The TLP550(F is a high-speed, high-sensitivity, and low
Depósito:10000
Mínimo:71
Favorita
Description: RTD2662-GR is a QFP128 integrated circuit (IC) manufactured by Realtek. It is a single-chip, low-power, high-definition (HD) digital TV (DTV) SoC (system-on-chip) solution. Features: S
Depósito:5000
Mínimo:1
Favorita
Depósito:10000
Mínimo:2
Favorita
Description: The BTN8962 is a high-voltage, high-speed, N-channel MOSFET driver IC from Infineon. Features: - High voltage capability up to 600V - High speed switching with a maximum frequency of 1MH
Depósito:10000
Mínimo:2
Favorita
Description: The PE43704MLCA-Z is a high-performance, low-power, low-noise, 4-channel, differential line driver with integrated ESD protection. Features: 4-channel differential line driver Low
Depósito:5000
Mínimo:1
Favorita
Depósito:10000
Mínimo:1
Favorita
Quantity: 50pcs Package: SOT-323 Manufacturer: Philips Description: The PMST2222A is a PNP transistor in a SOT-323 package from Philips. Features: - PNP transistor - SOT-323 package - Low voltage -
Depósito:10000
Mínimo:2
Favorita
AH512 is a three-terminal positive voltage regulator with a maximum output current of 1A. It is designed to provide a regulated output voltage of 5V. The device features internal current limiting, the
Depósito:10000
Mínimo:10
Favorita
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H4047M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA30H4047M1 is a RF power transistor module manufactured by Mitsubishi. It is designed for use in applications such as cellular base stations, repeaters, and other RF power amplifiers. The RA30H4047M
Depósito:2000
Mínimo:1
Favorita
Depósito:5000
Mínimo:10
Favorita
Description: 78L12G-AB3-R is a three-terminal positive voltage regulator with a maximum output current of 1A. Features: Output voltage range of 1.2V to 12V Output current of up to 1A Thermal over
Depósito:10000
Mínimo:21
Favorita
Description: TK5P50D5 is a N-channel enhancement mode MOSFET transistor manufactured by Toshiba. Features: - Low on-state resistance - Low gate charge - Low input capacitance - High speed switching
Depósito:10000
Mínimo:10
Favorita
Description: NPN Silicon Transistor Features: - High current (max. 1.5 A) - Low voltage (max. 40 V) - Low noise - High switching speed - Low collector-emitter saturation voltage Applications: - Audio
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.