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MITSUBISHI CM150DY-12E is a power module for use in motor control applications. It is a high-performance, high-reliability module that provides a wide range of features and functions. Features: High
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Infineon Technologies AG
EconoPIM? 3 1200 V, 50 A three phase PIM IGBT module with low sat & fast TRENCHSTOP? IGBT3 and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are available in Econo2 and Econo3 housing and also available with Solder- or PressFIT pins.
Description: Infineon IGBT Module Features: - 1200V blocking voltage - 50A continuous current - Low switching losses - High frequency operation - Low EMI - Short circuit withstand capability - Low gat
Depósito:2000
Mínimo:1
Favorita
BSM35GD120DN2E3224 is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module with a rated current of 1200A and a rated voltage of 1200V. It is designed for use in app
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
FP75R12KE3 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It features a reverse current rating of 48A, a forward voltage of 1200V, a Vce(sat) of 1.86V and a collector-e
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
00+
IGBT Modules up to 1200V SixPACK; Package: AG-ECONOPP-1; IC max: 450.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EconoPACK? +;
FS450R12KE3 is an insulated-gate bipolar power transistor (IGBT) module manufactured by Eupec. It is a 3-phase, half-bridge configuration rated at 450A, 12kV. It has an inductance of 0.8mH and a leaka
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec/siemens
00+
IGBT Power Module Three single switches Including fast free-wheeling diodes Package with insulated metal base plate
BSM100GT120DN2 is a 1200V/100A insulated gate bipolar transistor (IGBT) module made by EUPEC/Siemens. It is designed for use in high power switching applications such as motor control, UPS, welding, a
Depósito:2000
Mínimo:1
Favorita
Description: The MG300Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. It is designed for use in motor control applications. Features: High-spe
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
00+
IGBT Modules up to 1200V Dual ; Package: AG-34MM-1; IC max: 50.0 A; VCEsat typ: 2.1 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss; Housing: 34 mm;
Description: The BSM50GB120DLC is a 1200V insulated gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage Low on-state resistance Low switching losses High f
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
00+
IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 200.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;
Description: The BSM200GB60DLC is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 200A continuous collector current Low switching losses Low gate ch
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-ECONO2-1; IC max: 40.0 A; VCEsat typ: 1.8 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3; Housing: EconoPIM™ 2;
Description: The FP40R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a maximum blocking voltage of 1200V. Features: Maximum blocking
Depósito:2000
Mínimo:1
Favorita
Description: This is a Toshiba IGBT Module. Features: 200A, 600V Low on-state voltage Low switching loss Low noise High speed switching High reliability High surge capability Applications:
Depósito:2000
Mínimo:1
Favorita
The BSM100GD120DLC is a 1200V insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in motor control, UPS, welding, and other power conversion applications. Fe
Depósito:2000
Mínimo:1
Favorita
Depósito:2000
Mínimo:1
Favorita
Description: The FS300R12KE3 is a three-phase insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in motor control, uninterruptible power supply (UPS) systems
Depósito:2000
Mínimo:1
Favorita
Description: The CM600HA-12H is a 600A, 1200V, insulated-gate bipolar transistor (IGBT) module from Mitsubishi. Features: - Low on-state voltage drop - High speed switching - Low noise - High surge c
Depósito:2000
Mínimo:1
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.