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Código de paísINFINEON
Su búsqueda:Infineon, Cantidad de productos pertinentes:47
Description: The BTS432E2E3062ABUMA1 is a N-channel enhancement mode Field-Effect Transistor (FET) with a low on-state resistance. Features: * Low on-state resistance * Low gate charge * Low input/ou
Depósito:10000
Mínimo:2
Favorita
Depósito:10000
Mínimo:2
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Depósito:10000
Mínimo:1
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Depósito:10000
Mínimo:1
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Description: The SPW20N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage, high speed, low gate charge and low on-resistance MOSFET. It is suitable for use in a variety of ap
Depósito:5000
Mínimo:1
Favorita
Description: SPP20N60C3 is a N-channel MOSFET produced by Infineon Technologies. It is a high voltage, high speed, low on-resistance MOSFET with a maximum drain-source voltage of 600V and a maximum dr
Depósito:10000
Mínimo:1
Favorita
Description: The IRLU3110ZPBF is a N-Channel Power MOSFET from Infineon Technologies. It is designed to be used in a wide range of applications such as DC-DC converters, motor drives, and power manag
Depósito:5000
Mínimo:1
Favorita
Description: The SPA04N60C3 is a N-channel MOSFET from Infineon Technologies. It is a high voltage and high current device with a maximum drain-source voltage of 600V and a maximum drain current of 4A
Depósito:10000
Mínimo:1
Favorita
Description: The Infineon Technologies IRFB4019PBF is a N-channel power MOSFET designed for use in high-power switching applications. It is a high-performance device with low on-state resistance, fast
Depósito:10000
Mínimo:1
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Depósito:10000
Mínimo:2
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Depósito:10000
Mínimo:1
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Depósito:10000
Mínimo:1
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Description: The IKW40T120 is a 1200V, 40A, three-phase insulated gate bipolar transistor (IGBT) module from Infineon Technologies. It is designed for use in motor control, UPS, welding and other indu
Depósito:2000
Mínimo:1
Favorita
Description: The BTS723GWXUMA1 is a 3-phase Smart Low-Side Power Switch from Infineon Technologies. It is a monolithic integrated circuit designed for use in automotive and industrial applications. F
Depósito:10000
Mínimo:1
Favorita
Description: The IRF640NPBF is a N-channel enhancement mode power MOSFET produced by Infineon Technologies. It is housed in a TO-220-3 package and is designed for use in power switching applications.
Depósito:10000
Mínimo:2
Favorita
Description: The IRF3205ZPBF is a N-channel MOSFET from Infineon Technologies. It is designed for use in high-current switching applications. It has a maximum drain-source voltage of 100V, a maximum d
Depósito:10000
Mínimo:2
Favorita
Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
Depósito:10000
Mínimo:1
Favorita
Description: The IR2010STRPBF is an integrated circuit from Infineon Technologies. It is a high-voltage, high-speed, low-side switch designed for automotive applications. Features: * High voltage ope
Depósito:10000
Mínimo:2
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Depósito:10000
Mínimo:4
Favorita
Detener a los expertos en producción, podemos proporcionar una gran cantidad de componentes electrónicos que se han detenido y que son difíciles de encontrar para facilitar la empresa de mantenimiento.