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Home > Elec-component > Modules > IGBT
MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV VBRCES | 15A IC
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 100.0 A; VCEsat typ: 2.5 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: 62 mm;
BSM100GB120DN2 is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module with a voltage rating of 1200V and a current rating of 100A. It is designed for use in motor
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 300.0 A; VCEsat typ: 2.1 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss; Housing: 62 mm;
BSM300GB120DLC is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 300A.
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module Single switch with chopper diode Package with insulated metal base plate
Description: BSM200GA120DN11 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 200A continuous current Low switching losses High short circuit
Stock:2000
Minimum:1
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The BSM200GA120DN2 is a 1200V insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in motor control, welding, and other power conversion applications. Feature
Stock:2000
Minimum:1
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV VBRCES | 300A IC
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: The BSM10GP120 is an EUPEC module that is designed for use in power electronic applications. It is a 1200V, 10A, single-phase, insulated-gate bipolar transistor (IGBT) module. Features:
Stock:2000
Minimum:1
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Description: The BSM15GP120 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a high-power semiconductor device with a maximum collector-emitter voltage of 1200V and a
Stock:2000
Minimum:1
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Description: BSM50GX120DN2 is an EUPEC-made IGBT module designed for medium voltage power conversion applications. It features low conduction and switching losses, fast switching times and low therma
Stock:2000
Minimum:1
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The BSM50GB100D is a module manufactured by EUPEC/SIE. It is an insulated gate bipolar transistor (IGBT) module with a maximum current rating of 100A. It has a voltage rating of 1200V and a maximum ju
Stock:2000
Minimum:1
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Description: BSM25GD120DN2 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 25A collector current Low switching losses High current de
Stock:2000
Minimum:1
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Description: The BSM150GB120DLC is a 1200V insulated gate bipolar transistor (IGBT) module from EUPEC. Features: - Low conduction and switching losses - High short circuit capability - High current c
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 200.0 A; VCEsat typ: 2.1 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss; Housing: 62 mm;
Description: The BSM200GB120DLC is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a 1200V, 200A module with a maximum junction temperature of 150°C. Features: 1200V/
Stock:2000
Minimum:1
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Description: BSM25GP120 is an insulated gate bipolar transistor module from Eupec. The module features high power dissipation, high surge capability, and low conduction losses. Features: High power
Stock:2000
Minimum:1
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Description: The BSM35GP120G is a 1200V, 35A IGBT module from EUPEC. Features: 1200V blocking voltage 35A continuous current Low on-state voltage Low switching losses High switching frequency S
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes
Description: The BSM75GD120DN2 is an insulated gate bipolar transistor module from EUPEC. It has a nominal current rating of 75A, voltage ratings of 1200V, and a maximum junction temperature of 150°C.
Stock:2000
Minimum:1
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MODULE
Eupec
N/A
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
The BSM150GB120DN2 is an insulated-gate bipolar transistor (IGBT) module produced by EUPEC. The module is designed with a 1200volt, 150amp IGBT, rated with a current of up to 480A and a voltage of up
Stock:2000
Minimum:1
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV VBRCES | 15A IC
BSM10GD100DN1 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module. It has a voltage rating of 1000V and a current rating of 100A. It is designed for use in appl
Stock:2000
Minimum:1
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BSM200GA100DN11 is an EUPEC module manufactured by Infineon Technologies. It is a 200A, 1200V, IGBT module with a reverse conducting diode. It is designed for use in motor drives, welding, UPS, solar
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company