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Home > Elec-component > Modules > IGBT
Description: SKM195GB124DN is a 1200V, 195A, three-phase bridge rectifier module manufactured by Semikron. Features: - Low forward voltage drop - High surge current capability - Low thermal resistanc
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Description: The MG50Q1BS11 is a three-phase bridge rectifier module from Toshiba. It is designed for use in a wide range of applications such as motor control, power conditioning, and power supply.
Stock:2000
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Description: The SKM200GB128D is a three-phase bridge rectifier module from Semikron. It is designed for use in applications such as motor control, power supplies, and UPS systems. Features: High s
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SKM100GB125DN is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a rated current of 100A and a voltage of 1200V. It is designed for use in motor drives, power suppl
Stock:2000
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The FS150R12KT3 is a three-phase insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in medium-voltage applications, such as motor drives, UPS systems, and re
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Description: The SKM195GAL124DN is a three-phase bridge rectifier module from Semikron. It is designed for use in motor drives, welding machines, and other industrial applications. Features: 1200V b
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MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 10.0 A; VCEsat typ: 1.9 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EasyPIM? 2;
Description: The FP10R12YT3 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a nominal current rating of 10A and a maximum voltage
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75J2YS40 is a 2GB DDR3 SDRAM module from Toshiba America Electronic Components. Features: - 2GB DDR3 SDRAM - 200-pin SO-DIMM - PC3-12800 (1600MHz) - Unbuffered - Non-ECC - 1.5V A
Stock:2000
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MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: BSM50GD120DN2G is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High s
Stock:2000
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Description: The BSM35GP120 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-voltage, high-speed switching device with a maximum collector-emitter voltage of 1200V and a
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes
Description: The BSM150GT120DN2 is a 1200V, 150A IGBT module from EUPEC. Features: - Low switching losses - Low noise - High speed switching - High current capability - Low thermal resistance Applic
Stock:2000
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Description: The SKM145GB128D is a high-performance, low-loss, three-phase bridge module from Semikron. It is designed for use in motor drives, power supplies, and other power conversion applications.
Stock:2000
Minimum:1
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The CM400DY-12E is a power module manufactured by Mitsubishi. It is a three-phase bridge rectifier module that is used to convert alternating current (AC) to direct current (DC). It has a maximum curr
Stock:2000
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV VBRCES | 1.2KA IC
Stock:2000
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Stock:2000
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Description: The SKM75GB128D is a three-phase bridge module from Semikron. It is a high-power module with a maximum current rating of 75A and a maximum voltage rating of 1200V. Features: - High power
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company