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Home > Elec-component > Modules > IGBT
MG15Q6ES42 is a 15A, 600V, three-phase insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed to provide high-speed switching and low loss in power switchi
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 300.0 A; VCEsat typ: 2.1 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss; Housing: 62 mm;
BSM300GB120DLC is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 300A.
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The MG100H2YS1 is a power module manufactured by Mitsubishi Electric. It is a three-phase bridge rectifier module with a rated current of 100A and a maximum voltage of 600V. It is designed for use in
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. The MG100G1AL3 is a power module manufactured by Mitsubishi Electric. It is a 100A, 1200V, IGBT module designed for use in motor drives, UPS systems, and other power conversion applications. It f
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Description: The MG150J1BS11 is a high-power IGBT module manufactured by Toshiba. It is designed to provide high-current and high-voltage switching capability in a variety of applications. Features:
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Description: The MG100G1AL2 is a 100A, 1200V, IGBT module manufactured by Mitsubishi Electric. Features: Low switching loss Low noise High speed switching High reliability Low saturation voltage
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Description: The MG15G4GL1 is a 15-inch, 4-wire resistive touch screen module from Mitsubishi Electric. Features: 4-wire resistive touch screen 15-inch diagonal size Compatible with various opera
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Description: This is a Mitsubishi IGBT module. It is a 100A, 600V, 2-element module. Features: Low saturation voltage High speed switching High input impedance Low power consumption H
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The MG50Q6ES11 is a power module manufactured by Mitsubishi Electric. It is a 6-pack IGBT module with a voltage rating of 600V and a current rating of 50A. It is designed for use in motor control appl
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Description: The MG100J2YS50 is a 1200V, 100A IGBT module manufactured by Toshiba. It is a two-terminal, insulated gate bipolar transistor (IGBT) module with a built-in diode. Features: High speed s
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SKM145GB124DN is a module from Semikron. It is a three-phase, insulated-gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 1200V. It has a maximum collector current of 1
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MODULE
IXYS
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
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Description: The MG25Q2YS40 is a 2-bit MOSFET module from Toshiba America Electronic Components. It is a surface mount device with a maximum drain-source voltage of 25V and a maximum drain current of
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company