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Description: The Littelfuse T2500DG is a fast-acting, surface-mount, three-terminal, 2500V, 2A, silicon-controlled rectifier (SCR). Features: Fast-acting Surface-mount Three-terminal 2500V 2
Stock:4
Minimum:1
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Description: The IRLML0030TRPBF is a HEXFET Power MOSFET from Infineon Technologies. It is a low-side MOSFET with a maximum drain-source voltage of 30V and a maximum drain current of 0.3A. Features:
Stock:135084
Minimum:5
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Description: The RZR025P01TL is a low-voltage, low-power, N-channel MOSFET manufactured by ROHM Semiconductor. It is housed in a SOT-23-3 package and is suitable for a wide range of applications, incl
Stock:1920
Minimum:5
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Description: The Infineon Technologies IRFR9120NTRPBF is a N-channel MOSFET transistor with a maximum drain current of 120A and a maximum drain-source voltage of 100V. It is designed for use in high c
Stock:2221
Minimum:5
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Description: The NCE3080K is a high-speed, low-power, low-noise, high-efficiency, low-voltage, low-dropout (LDO) linear regulator from Wuxi NCE Power Semiconductor. It is designed to provide a regula
Stock:6850
Minimum:5
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Stock:159
Minimum:2
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Stock:1220
Minimum:5
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Stock:331
Minimum:1
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: Description: 2SD1899 is a NPN silicon epitaxial transistor designed for use in audio frequency amplifier and switching applications. Features: High DC Current Gain Low Collector-Emitter Saturati
Stock:3120
Minimum:5
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Stock:2943
Minimum:7
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Description: The IRF9530NSTRLPBF is a N-channel enhancement-mode vertical DMOS power transistor in a TO-263-2 package. Features: Low on-resistance Low gate charge Fast switching Low input capacit
Stock:6136
Minimum:3
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Stock:4465
Minimum:5
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Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
Stock:216
Minimum:2
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Stock:8220
Minimum:20
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Description: Zener Diode Features: - Voltage Range: 5.1V - Power Dissipation: 500mW - Maximum Reverse Leakage Current: 5μA - Package: DO-35 Application: The 1N5245BTR is a 5.1V Zener diode de
Stock:70
Minimum:10
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Stock:40
Minimum:20
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Stock:120
Minimum:10
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Stock:6300
Minimum:50
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Description: Axial Leaded Zener Diode Features: Low Zener Impedance Low Leakage Current Low Noise Low Thermal Resistance Low Reverse Leakage Current High Reliability High Power Dissipation Hig
Stock:191
Minimum:6
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Description: The 2SC3303 is a NPN silicon epitaxial transistor designed for use in low frequency power amplification and switching applications. Features: Low collector-emitter saturation voltage
Stock:725
Minimum:5
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company