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Description
Semitrans (r) M Low Loss Igbt Modules
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Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
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80SKT100 : Thyristors SKIIP83AC12 : Miniskiip 8 Semikron Integrated Intelligent Power SKKT92/14E1 : Semipack(r) 1 Thyristor/diode Modules SKM400GA128D : Semitrans IGBT Modules New Range SK45WT_06 : Antiparallel Thyristor Module SKKH132/18E : Thyristor / Diode Modules SKN2F50/10 : Fast Recovery Rectifier Diode SKKH300/16E : 510 A, 800 V, SCR Specifications: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 510 amps ; IGT: 200 mA ; Package Type: CASE A 76A, SEMIPACK-7 ; Pin Count: 7 SKPT14A3 : PULSE TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S) Specifications: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS |
Same catergory
Same catergory |
BUP53R : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AE) ;; Vceo = 250V ;; IC(cont) = 60A ;; HFE(min) = 15 ;; HFE(max) = - ;; @ Vce/ic = 4V / 20A ;; FT = - ;; PD = 300W. CDLL02A20 : 0.2 & 0.5 Amp Schottky Barrier Rectifiers. 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS HERMETICALLY SEALEDLEADLESS PACKAGE FOR SURFACE MOUNT METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION Operating Temperature: to +125°C Storage Temperature: to +150°C Average Rectified Forward Current: 0.2 AMP @ TEC = +100°C Derating: / °C above +100°C ELECTRICAL. DF02S : 1.5A Bridge Rectifier. 005S Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 40°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 140 200 *These ratings are limiting values above which the serviceability of any semiconductor. NTE2430 : Silicon NPN Transistor. High Voltage Amp/switch (compl to 2431).. NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) : The is a silicon NPN transistor a SOT89 type surface mount package designed for use in amplifier and switching applications. Absolute Maximum Ratings: CollectorBase Voltage (Open Emitter), VCBO. 400V CollectorEmitter Voltage (Open Base), VCEO. 350V EmitterBase Voltage (Open. OMH310 : 50V Hi-rel Multi-chip MOSFET Half-bridge Module in a MP-3 Package. DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE Dual 50 Volt, 15 And 20 Amp H-Bridge With Current And Temperature Sensing In A Low Profile Plastic Package H-Bridge Configuration Zener Gate Protection 10 m Shunt Resistor 2 Linear Thermal Sensors, One For Each Bridge Isolated Package Output Currents To 20 Amps This series. PDTA143ET : SOT/Surface Mount. PNP Resistor-equipped Transistor. Built-in bias resistors R1 and R2 (typ. 4.7 k each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits. Inverter circuit configurations without use of external resistors. PNP resistor-equipped transistor a SOT23 plastic package. NPN complement:. VWO50 : Three Phase ac Controller Modules. Test Conditions 400 Hz (per phase) TVJ = TVJM 85°C; (180° sine) TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine Thyristor controller for AC (circuit W3C acc. to IEC) for mains frequency Package with metal base plate Isolation voltage 3000 V~ Planar. 0603X391J101N : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00039 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.90E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style:. BUL48AR1 : 15 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN. BUX98AFR1 : 30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN. CRSH1-2BK : 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41. s: Number of Diodes: 1 ; IF: 1000 mA. ES3W1R0J : RESISTOR, WIRE WOUND, 3 W, 5 %, 300 ppm, 1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 3 watts (0.0040 HP) ; Standards. MVE100VC100MK14 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 100 V, 100 uF, SURFACE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Leakage Current: 100 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -40 to 105 C (-40 to 221 F). VS-40L15CT-1PBF : 15 V, SILICON, RECTIFIER DIODE, TO-262AA. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 700000 mA ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2. 1211EA-1004 : 2 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 2 ; Lead Style: WRAPAROUND ; Application: General Purpose, High Current ; Inductance Range: 10 microH ; Rated DC Current: 2800 milliamps ; Operating Temperature: -40 to 85 C (-40 to 185 F). 2SC4815-AZ : 5 A, 60 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN. The is a power transistor developed for high-speed switching and low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping s and for mounting cost reduction. High hFE and low VCE(sat): VCE(sat) 0.3 V @IC 0.15 A hFE 100 @VCE. 3AM1CVB109MHA25050 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 1200 microamps ; Mounting Style: Through Hole ; Operating Temperature:. 420VXH100MEFCSN22X25 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 420 V, 100 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 420 volts ; Leakage Current: 615 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F). |
6 buyer reviews from Philippines
Brian Taylor
Length of registration:7 years
The testing result for the Intergrated Circuits SKM195GB124DN ordered from Utsource website was satisfactory. The device was tested for its electrical characteristics and it was found to be within the specified limits. The device was also tested for its thermal characteristics and it was found to be within the specified limits. The device was also tested for its mechanical characteristics and it w
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03/17/2023
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SKM195GB124DN
SKM195GB124DN has several brands around the world that may have alternate names for SKM195GB124DN due to regional differences or acquisition. SKM195GB124DN may also be known as the following names:
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