RJP63F3
Category: IC Chips
Description: Silicon N Channel IGBT High Speed Power Switching
Price range ($)
0.33528 0.83820
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RJP63F3
RJP63F3 has several brands around the world that may have alternate names for RJP63F3 due to regional differences or acquisition. RJP63F3 may also be known as the following names:
All sellers
2
Brand new
2
Certified preowned
2
Official
2
Third Party
2
Description
RJP63F3
Stock:9999 |
Renesas |
Silicon N Channel IGBT High Speed Power Switching |
≥1: US $0.83820 US $0.75438 ≥5: US $0.62865 US $0.56579 ≥10: US $0.44006 US $0.39606 ≥20: US $0.41910 US $0.37719 ≥50: US $0.37719 US $0.33947 ≥100: US $0.36671 US $0.33004 ≥200: US $0.35624 US $0.32062 ≥500: US $0.34576 US $0.31118 ≥1000: US $0.33528 US $0.30175
More:
Inquiry
|
RJP63F3
Stock:2 |
Renesas 09+ |
Silicon N Channel IGBT High Speed Power Switching |
≥1: US $0.67056 US $0.63033
More:
Inquiry
|
Out of stock |
Description
Collector to emitter voltage VCES 630V Gate to emitter voltage VGES ±30V Collector current IC 40A Collector peak current ic (peak) Note1 200 A Collector dissipation PC Note2 30 W Junction to case thermal impedance θj-c 4.17℃/ W Junction temperature Tj 150℃ Storage temperature Tstg –55 to +150℃
Features
● Trench gate and thin wafer technology (G6H series)
● Low collector to emitter saturation voltage VCE(sat) = 1.7V typ
● High speed switching tf = 100ns typ
● Low leak current ICES = 1μA max
● Isolated package TO-220FL
Applications
● Audio frequency high power driver
E-catalog
Freight calculation
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 200$,Overweight will be charged separately
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