RequiredSST39SF010A-70-4C-PHE
Category: Memory
Description： The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
Price range ($)
3.82230 4.93200
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SST39SF010A-70-4C-PHE
SST39SF010A-70-4C-PHE has several brands around the world that may have alternate names for SST39SF010A-70-4C-PHE due to regional differences or acquisition. SST39SF010A-70-4C-PHE may also be known as the following names:
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Description
SST39SF010A-70-4C-PHE
Stock:9999 |
SST 06+ |
The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories. |
≥1: US $4.93200 US $4.43880 ≥5: US $4.68540 US $4.21686 ≥10: US $4.43880 US $3.99492 ≥20: US $4.31550 US $3.88395 ≥50: US $4.19220 US $3.77298 ≥100: US $4.06890 US $3.66201 ≥200: US $3.94560 US $3.55104 ≥500: US $3.89628 US $3.50665 ≥1000: US $3.82230 US $3.44007
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Introduction:
The Integrated Circuit SST39SF010A-70-4C-PHE is a multi-purpose CMOS flash high performance super flash technology. It is designed and fabricated with a split gate and cell design manufacturability with technical approach. The IC SST39SF010A-70-4C-PHE can write the program or erase it with power source applied voltage of 4.5-5V. It features high performance bit configuration for maximum programming delay time of byte programme of 20 Micro Seconds. With the toggle bit functional operation.
These integrated circuit is most suitable for the devices which needs regular updating work, configuration of data memory and optimisation of micro controller. They also improve system reliability, performance, efficiency, with the best power consumption and low power dissipation. The storage application, data program and also improve the device flexibility.
SST39SF010A-70-4C-PHE Functional Block Diagram:
Pinout configuration of SST39SF010A-70-4C-PHE
Symbol | Pin name | Pin description |
Ams-A0 | Address input pin | This pins provide address to the memory |
DQ7-DQ0 | Data input and output | It is used to receive data read and recycle it |
CE# | Chip enable pin | This is chip activation pins |
OE# | Output enable | The gate data output is configures |
WE# | Write enable | It controls the writing application |
Vdd | Power supply | Provides the power supply |
Vss | Ground | Remain base or grounded |
NC | Not connected | This pins are not connected |
Key Features of SST39SF010A-70-4C-PHE:
● Single read or erase functionality at 4,5-5V power supply
● It offers superior reliability and endurance with 1000,000 cycles
● Lower power consumption with 14MHz
● Fast read access and easily configured
● Best for programming the data read and erase working operation.
Applications of SST39SF010A-70-4C-PHE:
As shown in the figure below it is used in computing digital circuits for reading, writing and erasing purpose with lower power consumption.
SST39SF010A-70-4C-PHE application
● It is extensively used in latching address data
● Automatic wiring and internal reading applications
● Erasing and reading used for the computing applications etc.
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Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 200$,Overweight will be charged separately
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