CM50TJA-34KA
MODULE
Mitsubi
Trench Gate Design Six IGBTMOD? 50 Amperes/1200 Volts
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MODULE
Mitsubishi
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Description: Infineon IGBT Module Features: Low switching losses High current capability Low thermal resistance Low gate charge High temperature operation High frequency opera
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MODULE
Eupec-Infineon
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Description: The BSM100GB120DN2K is an IGBT module manufactured by EUPEC-INFINEON. It is a three-phase, insulated gate bipolar transistor (IGBT) module with a maximum collector current of 1200A. Feat
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MODULE
Eupec
IGBT Modules up to 1600V / 1700V Dual; Package: A-IHM130-2; IC max: 1,200.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: IHM 130 mm;
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MODULE
Semikron
IGBT Modules up to 1600V / 1700V Dual; Package: AG-ECONOD-3; IC max: 450.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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MODULE
Siemens
SIMOPAC Module Power module Single switch N channel Enhancement mode
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MODULE
Infineon Technologies AG
10+
62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode
Description: Infineon IGBT Module Features: Low switching losses High current capability Low thermal resistance Low gate charge Low inductance RoHS compliant Short c
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.2KA IC
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: A-IHM130-2; IC max: 800.0 A; VCEsat typ: 2.7 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;
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MODULE
Semikron
IGBT Modules up to 1200V Dual ; Package: AG-ECONOD-3; IC max: 300.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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MODULE
Mitsubishi
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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MODULE
Eupec
IGBT Modules up to 1200V Single; Package: A-IHM130-2; IC max: 1,600.0 A; VCEsat typ: 2.7 V; Configuration: Single Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;
Description: This is an EUPEC module manufactured by Infineon Technologies. It is a 1600V, 17kA, IGBT module with a fast-recovery diode. Features: * 1600V blocking voltage * 17kA short-circui
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Description: The CM50FL6-12NFH is a Mitsubishi IGBT module designed for high-speed switching applications. It features a high-speed switching IGBT with an integrated fast recovery diode. Features: H
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MG600Q1US51 is a 600V insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed for use in motor control applications such as inverters, servo drives, and UPS
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-ECONOD-3; IC max: 450.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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MODULE
Eupec
62mm C-series module with the fast IGBT2 for high-frequency switching
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Description: The CM50E3Y-24E is a module manufactured by Mitsubishi. It is a 50A, 3-phase, AC contactor with an AC coil voltage of 24V. Features: 50A rated current 3-phase AC contactor AC coil vo
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Especialistas em produção interrompida, podemos fornecer um grande número de componentes eletrônicos que foram interrompidos e são difíceis de encontrar, para facilitar a empresa de manutenção