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Alternate Text Utsource
RJP30E2

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2

TO-220

Renesas

09+

Silicon N Channel IGBT High Speed Power Switching

Utsource

≥1:

US $0.82200

US $0.73980

≥5:

US $0.61650

US $0.55485

≥10:

US $0.43155

US $0.38840

≥20:

US $0.41100

US $0.36990

≥50:

US $0.36990

US $0.33291

≥100:

US $0.35962

US $0.32366

≥200:

US $0.34935

US $0.31442

≥500:

US $0.33908

US $0.30517

≥1000:

US $0.32880

US $0.29592

From: US $0.32880

Description: The RJP30E2 is a N-channel type of radial leaded power MOSFET and it is designed for use in power switching applications. Features: - Low ON-resistance - High speed switching - Excellen

Stock:10000

Minimum:3

Favorite

RJP30E2

Enlarge

Used and refurbished parts guaranteed can work well

US $1.34112

US $1.26065

From: US $1.34112

Stock:8

Minimum:2

Favorite

RJP30E2(300V)

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2(300V)

TO-220

Renesas

Silicon N Channel IGBT High Speed Power Switching

Utsource

≥1:

US $1.09600

US $0.98640

≥5:

US $0.82200

US $0.73980

≥10:

US $0.49320

US $0.44388

≥20:

US $0.47950

US $0.43155

≥50:

US $0.46580

US $0.41922

≥100:

US $0.45210

US $0.40689

≥200:

US $0.43840

US $0.39456

≥500:

US $0.43292

US $0.38963

≥1000:

US $0.42470

US $0.38223

From: US $0.42470

Description: N-Channel Power MOSFET Features: Low On-Resistance High Speed Switching Low Gate Charge Low Input Capacitance Avalanche Energy Rated RoHS Compliant Applications: DC/DC Converters

Stock:10000

Minimum:3

Favorite

RJP30E2(600V)

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2(600V)

TO-220

Renesas

Silicon N Channel IGBT High Speed Power Switching

Utsource

≥1:

US $0.83460

US $0.75114

≥5:

US $0.62595

US $0.56335

≥10:

US $0.43816

US $0.39435

≥20:

US $0.41730

US $0.37557

≥50:

US $0.37557

US $0.33801

≥100:

US $0.36514

US $0.32863

≥200:

US $0.35470

US $0.31923

≥500:

US $0.34427

US $0.30984

≥1000:

US $0.33384

US $0.30046

From: US $0.33384

Description: RJP30E2 is a 600V N-Channel Power MOSFET transistors manufactured by Renesas Electronics Corporation. Features: - Maximum Drain Source Voltage: 600V - Maximum Drain-Source On-State Re

Stock:10000

Minimum:3

Favorite

RJP30E2DPK

Enlarge

Original parts, guaranteed brand new

US $1.11760

US $1.05054

From: US $1.11760

Stock:2795

Minimum:5

Favorite

RJP30E2DPK

Enlarge

Original parts, guaranteed brand new

RJP30E2DPK

TO-3P

Renesas

Silicon N Channel IGBT High Speed Power Switching

Utsource Original Store

≥1:

US $2.09550

US $1.88595

≥5:

US $1.39700

US $1.25730

≥10:

US $1.25730

US $1.13157

≥20:

US $1.22238

US $1.10014

≥50:

US $1.18745

US $1.06871

≥100:

US $1.15253

US $1.03727

≥200:

US $1.11760

US $1.00584

≥500:

US $1.10363

US $0.99327

≥1000:

US $1.08268

US $0.97441

From: US $1.08268

Stock:10000

Minimum:2

Favorite

RJP30E2DPP

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2DPP

TO220F

Renesas

15+

Utsource

≥1:

US $0.89040

US $0.83698

≥5:

US $0.66780

US $0.62773

≥10:

US $0.46746

US $0.43941

≥20:

US $0.44520

US $0.41849

≥50:

US $0.40068

US $0.37664

≥100:

US $0.38955

US $0.36618

≥200:

US $0.37842

US $0.35571

≥500:

US $0.36729

US $0.34525

≥1000:

US $0.35616

US $0.33479

From: US $0.35616

Stock:10000

Minimum:3

Favorite

RJP30E2DPK

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2DPK

TO-3

Silicon N Channel IGBT High Speed Power Switching

Utsource

≥1:

US $2.33100

US $2.09790

≥5:

US $1.55400

US $1.39860

≥10:

US $1.39860

US $1.25874

≥20:

US $1.35975

US $1.22377

≥50:

US $1.32090

US $1.18881

≥100:

US $1.28205

US $1.15385

≥200:

US $1.24320

US $1.11888

≥500:

US $1.22766

US $1.10489

≥1000:

US $1.20435

US $1.08391

From: US $1.20435

The RJP30E2DPK is a N-Channel Power MOSFET manufactured by Renesas. It is a TO-3 package type and has a drain-source voltage of 30V. It has an on-state resistance of 0.0045 Ohms and a maximum drain cu

Stock:10000

Minimum:2

Favorite

RJP30E2DPK-M0

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2DPK-M0

TO-3P

Renesas

00+

Utsource

≥1:

US $2.17950

US $1.96155

≥5:

US $1.45300

US $1.30770

≥10:

US $1.30770

US $1.17693

≥20:

US $1.27138

US $1.14424

≥50:

US $1.23505

US $1.11155

≥100:

US $1.19872

US $1.07885

≥200:

US $1.16240

US $1.04616

≥500:

US $1.14787

US $1.03308

≥1000:

US $1.12608

US $1.01347

From: US $1.12608

Description: RJP30E2DPK-M0 is a high-voltage, high-speed, N-channel MOSFET produced by Renesas. It is designed for use in switching applications. Features: - Low on-resistance: RDS(on) = 0.0045 Ω - L

Stock:10000

Minimum:2

Favorite

RJP30E2DPP

Enlarge

Used and refurbished parts guaranteed can work well

RJP30E2DPP

TO-220

Renesas

10+

Utsource

≥1:

US $1.18240

US $1.06416

≥5:

US $0.88680

US $0.79812

≥10:

US $0.53208

US $0.47887

≥20:

US $0.51730

US $0.46557

≥50:

US $0.50252

US $0.45227

≥100:

US $0.48774

US $0.43897

≥200:

US $0.47296

US $0.42566

≥500:

US $0.46705

US $0.42035

≥1000:

US $0.45818

US $0.41236

From: US $0.45818

Description: The RJP30E2DPP is a N-channel MOSFET with a drain-source voltage of 30V and a drain current of 5.5A. Features: - Low on-resistance - Low gate charge - High speed switching - Avalanche en

Stock:10000

Minimum:2

Favorite

RJP30E2DPP

Enlarge

Used and refurbished parts guaranteed can work well

US $0.78232

US $0.73538

From: US $0.78232

Stock:20463

Minimum:3

Favorite

RJP30E2DPK

Enlarge

Used and refurbished parts guaranteed can work well

US $0.97790

US $0.91923

From: US $0.97790

Stock:20464

Minimum:3

Favorite

RJP30E2 TO-220 RENESAS N/A

0

Silicon N Channel IGBT High Speed Power Switching

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RJP30E2DPK-MO

Silicon N Channel IGBT High Speed Power Switching

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