IGBT

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CM300DY-24G

MODULE

Mitsubish

N/A

HIGH POWER SWITCHING USE

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≥1:

11759.27410 руб.

11053.71761 руб.

≥2:

11759.27410 руб.

11053.71761 руб.

≥5:

10975.32246 руб.

10316.80307 руб.

≥10:

10975.32246 руб.

10316.80307 руб.

≥20:

10975.32246 руб.

10316.80307 руб.

≥30:

10975.32246 руб.

10316.80307 руб.

≥50:

10975.32246 руб.

10316.80307 руб.

≥100:

10896.92732 руб.

10243.11174 руб.

≥500:

10818.53217 руб.

10169.42027 руб.

From: 10818.53217 руб.

Наличность:2000

Минимальное количество заказа:1

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BSM25GD120DN2E3224

MODULE

Eupec

IGBT Power Module

Utsource

≥1:

6322.54108 руб.

5943.18862 руб.

≥2:

6322.54108 руб.

5943.18862 руб.

≥5:

6111.78971 руб.

5745.08233 руб.

≥10:

6027.48916 руб.

5665.83981 руб.

≥20:

5985.33889 руб.

5626.21856 руб.

≥30:

5901.03834 руб.

5546.97604 руб.

≥50:

5901.03834 руб.

5546.97604 руб.

≥100:

5858.88807 руб.

5507.35479 руб.

≥500:

5816.73780 руб.

5467.73353 руб.

From: 5816.73780 руб.

Description: The BSM25GD120DN2E3224 is a high power insulated gate bipolar transistor (IGBT) module produced by Eupec. It is a 3-phase module featuring three 1200V IGBTs in each phase. Features: - L

Наличность:2000

Минимальное количество заказа:1

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SKM100GA121D

MODULE

Semikron

N/A

SEMITRANS IGBT Modules New Range

Utsource

≥1:

6414.14947 руб.

6029.30046 руб.

≥2:

6414.14947 руб.

6029.30046 руб.

≥5:

5986.53959 руб.

5627.34717 руб.

≥10:

5986.53959 руб.

5627.34717 руб.

≥20:

5986.53959 руб.

5627.34717 руб.

≥30:

5986.53959 руб.

5627.34717 руб.

≥50:

5986.53959 руб.

5627.34717 руб.

≥100:

5943.77858 руб.

5587.15179 руб.

≥500:

5901.01756 руб.

5546.95657 руб.

From: 5901.01756 руб.

Description: SKM100GA121D is a 1200V, 100A, 3-phase IGBT module from Semikron. Features: 1200V blocking voltage 100A continuous current Low inductance design Low thermal resistance

Наличность:2000

Минимальное количество заказа:1

В избранное

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WIRE, PTFE, B, BLACK, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/0.2; Voltage rating, AC:600V; Current rating:11A; Colour, primary insulation:Black; Material, primary insulation:PTFE; Diameter, External:1.6mm; RoHS Compliant: Yes

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≥1:

2834.24255 руб.

2664.18800 руб.

≥2:

2834.24255 руб.

2664.18800 руб.

≥5:

2739.76780 руб.

2575.38173 руб.

≥10:

2701.97790 руб.

2539.85923 руб.

≥20:

2683.08295 руб.

2522.09797 руб.

≥30:

2645.29305 руб.

2486.57547 руб.

≥50:

2645.29305 руб.

2486.57547 руб.

≥100:

2626.39810 руб.

2468.81421 руб.

≥500:

2607.50315 руб.

2451.05296 руб.

From: 2607.50315 руб.

Description: Toshiba IGBT Module Features: Low on-state voltage drop High speed switching Low switching losses High surge capability High reliability Low noise Applications: Motor

Наличность:2000

Минимальное количество заказа:1

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FP15R12YT3

MODULE

Eupec

IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 15.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EasyPIM 2;

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≥1:

2180.18658 руб.

2049.37539 руб.

≥2:

2180.18658 руб.

2049.37539 руб.

≥5:

2107.51369 руб.

1981.06287 руб.

≥10:

2078.44454 руб.

1953.73787 руб.

≥20:

2063.90996 руб.

1940.07536 руб.

≥30:

2034.84081 руб.

1912.75036 руб.

≥50:

2034.84081 руб.

1912.75036 руб.

≥100:

2020.30623 руб.

1899.08786 руб.

≥500:

2005.77165 руб.

1885.42535 руб.

From: 2005.77165 руб.

FP15R12YT3 is a three-phase IGBT module manufactured by EUPEC. It is designed for use in high-power applications such as motor drives, welding, and UPS. The module features a maximum collector curren

Наличность:2000

Минимальное количество заказа:1

В избранное

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BSM15GD120DN2E3224

MODULE

Eupec

IGBT Power Module

Utsource

≥1:

6046.62335 руб.

5683.82592 руб.

≥2:

6046.62335 руб.

5683.82592 руб.

≥5:

5845.06932 руб.

5494.36509 руб.

≥10:

5764.44762 руб.

5418.58079 руб.

≥20:

5724.13684 руб.

5380.68856 руб.

≥30:

5643.51514 руб.

5304.90426 руб.

≥50:

5643.51514 руб.

5304.90426 руб.

≥100:

5603.20436 руб.

5267.01203 руб.

≥500:

5562.89358 руб.

5229.11996 руб.

From: 5562.89358 руб.

Description: The BSM15GD120DN2E3224 is a 1200V, 15A IGBT module from EUPEC. Features: Low conduction losses Low switching losses High current capability Low gate charge Low inductance High surg

Наличность:2000

Минимальное количество заказа:1

В избранное

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MG400Q1US41

MODULE

Toshiba America Electronic Components

N/A

TRANSISTOR 400 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor

Utsource

≥1:

6414.14947 руб.

6029.30046 руб.

≥2:

6414.14947 руб.

6029.30046 руб.

≥5:

5986.53959 руб.

5627.34717 руб.

≥10:

5986.53959 руб.

5627.34717 руб.

≥20:

5986.53959 руб.

5627.34717 руб.

≥30:

5986.53959 руб.

5627.34717 руб.

≥50:

5986.53959 руб.

5627.34717 руб.

≥100:

5943.77858 руб.

5587.15179 руб.

≥500:

5901.01756 руб.

5546.95657 руб.

From: 5901.01756 руб.

Description: The MG400Q1US41 is a high-performance insulated gate bipolar transistor (IGBT) module with a rated current of 400A and a voltage rating of 1200V. Features: Low saturation voltage High

Наличность:2000

Минимальное количество заказа:1

В избранное

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BSM200GB120DL

MODULE

Eupec

N/A

IGBT Power Module Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes

Utsource

≥1:

10388.11305 руб.

9764.82619 руб.

≥2:

10388.11305 руб.

9764.82619 руб.

≥5:

9695.57213 руб.

9113.83774 руб.

≥10:

9695.57213 руб.

9113.83774 руб.

≥20:

9695.57213 руб.

9113.83774 руб.

≥30:

9695.57213 руб.

9113.83774 руб.

≥50:

9695.57213 руб.

9113.83774 руб.

≥100:

9626.31807 руб.

9048.73897 руб.

≥500:

9557.06400 руб.

8983.64019 руб.

From: 9557.06400 руб.

BSM200GB120DL is an IGBT module manufactured by EUPEC. It is a high-power, high-speed, and high-efficiency module designed for use in motor control, UPS, welding, and other applications. Description:

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM151F

MODULE

Semikron

N/A

SEMITRANS IGBT Modules New Range

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≥1:

6627.95441 руб.

6230.27718 руб.

≥2:

6627.95441 руб.

6230.27718 руб.

≥5:

6186.09091 руб.

5814.92548 руб.

≥10:

6186.09091 руб.

5814.92548 руб.

≥20:

6186.09091 руб.

5814.92548 руб.

≥30:

6186.09091 руб.

5814.92548 руб.

≥50:

6186.09091 руб.

5814.92548 руб.

≥100:

6141.90448 руб.

5773.39016 руб.

≥500:

6097.71806 руб.

5731.85499 руб.

From: 6097.71806 руб.

SKM151F is a 3-phase bridge rectifier module manufactured by Semikron. It is a compact, high-performance module with a high surge current capability. It is designed for use in motor drives, UPS system

Наличность:2000

Минимальное количество заказа:1

В избранное

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VUB116-16NO1

MODULE

IXYS

OSC 5V 8PIN CMOS

Utsource

≥1:

9810.83961 руб.

9222.18923 руб.

≥2:

9810.83961 руб.

9222.18923 руб.

≥5:

9156.78364 руб.

8607.37662 руб.

≥10:

9156.78364 руб.

8607.37662 руб.

≥20:

9156.78364 руб.

8607.37662 руб.

≥30:

9156.78364 руб.

8607.37662 руб.

≥50:

9156.78364 руб.

8607.37662 руб.

≥100:

9091.37804 руб.

8545.89536 руб.

≥500:

9025.97244 руб.

8484.41409 руб.

From: 9025.97244 руб.

VUB116-16NO1 is an IXYS module that is designed for use in high power applications. It is a 16A, 600V, three-phase bridge rectifier module. It features a low forward voltage drop, low thermal resistan

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKIIP11NEB063T22

Utsource

≥1:

6322.54108 руб.

5943.18862 руб.

≥2:

6322.54108 руб.

5943.18862 руб.

≥5:

6111.78971 руб.

5745.08233 руб.

≥10:

6027.48916 руб.

5665.83981 руб.

≥20:

5985.33889 руб.

5626.21856 руб.

≥30:

5901.03834 руб.

5546.97604 руб.

≥50:

5901.03834 руб.

5546.97604 руб.

≥100:

5858.88807 руб.

5507.35479 руб.

≥500:

5816.73780 руб.

5467.73353 руб.

From: 5816.73780 руб.

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKMD150F12

MODULE

Semikron

Fast Diode Modules

Utsource

≥1:

3775.66078 руб.

3549.12108 руб.

≥5:

3640.40695 руб.

3421.98248 руб.

≥10:

3506.19364 руб.

3295.82206 руб.

From: 3506.19364 руб.

Description: The SKMD150F12 is a three-phase bridge rectifier module from Semikron. It has a maximum current rating of 150A, a forward voltage drop of 1.2V, and a reverse voltage of 600V. Features:

Наличность:2000

Минимальное количество заказа:1

В избранное

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Fp20r06kl4

MODULE

Eupec

04+

IGBT-Module

Utsource

≥1:

2398.20524 руб.

2254.31292 руб.

≥2:

2398.20524 руб.

2254.31292 руб.

≥5:

2318.26506 руб.

2179.16916 руб.

≥10:

2286.28899 руб.

2149.11165 руб.

≥20:

2270.30096 руб.

2134.08290 руб.

≥30:

2238.32489 руб.

2104.02540 руб.

≥50:

2238.32489 руб.

2104.02540 руб.

≥100:

2222.33685 руб.

2088.99664 руб.

≥500:

2206.34882 руб.

2073.96789 руб.

From: 2206.34882 руб.

Description: The FP20R06KL4 is an insulated gate bipolar transistor (IGBT) module from Eupec. It is a three-phase, full-bridge module with an integrated freewheeling diode. Features: Rated voltage:

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM400GB123D

MODULE

Semikron

N/A

IGBT Modules

Utsource

≥1:

9374.80229 руб.

8812.31416 руб.

≥2:

9374.80229 руб.

8812.31416 руб.

≥5:

8749.81547 руб.

8224.82655 руб.

≥10:

8749.81547 руб.

8224.82655 руб.

≥20:

8749.81547 руб.

8224.82655 руб.

≥30:

8749.81547 руб.

8224.82655 руб.

≥50:

8749.81547 руб.

8224.82655 руб.

≥100:

8687.31679 руб.

8166.07778 руб.

≥500:

8624.81811 руб.

8107.32902 руб.

From: 8624.81811 руб.

SKM400GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is a high power module with a maximum current rating of 400A and a maximum voltage rating of 1200V. It is designed to

Наличность:2000

Минимальное количество заказа:1

В избранное

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FP15R12KE3G

MODULE

Eupec

07+

IGBT-Module

Utsource

≥1:

4917.51461 руб.

4622.46371 руб.

≥2:

4917.51461 руб.

4622.46371 руб.

≥5:

4753.59743 руб.

4468.38164 руб.

≥10:

4688.03064 руб.

4406.74878 руб.

≥20:

4655.24717 руб.

4375.93228 руб.

≥30:

4589.68024 руб.

4314.29942 руб.

≥50:

4589.68024 руб.

4314.29942 руб.

≥100:

4556.89692 руб.

4283.48307 руб.

≥500:

4524.11346 руб.

4252.66671 руб.

From: 4524.11346 руб.

Description: This is an EUPEC module with a rated current of 15A and a voltage rating of 1200V. It is designed for use in power electronic applications such as motor drives, power supplies, and invert

Наличность:2000

Минимальное количество заказа:1

В избранное

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CM15TF-12H

MODULE

Mitsubis

00+

MEDIUM POWER SWITCHING USE INSULATED TYPE

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≥1:

1831.35673 руб.

1721.47532 руб.

≥5:

1729.61469 руб.

1625.83781 руб.

≥10:

1678.74367 руб.

1578.01905 руб.

≥20:

1627.87265 руб.

1530.20029 руб.

≥50:

1577.00163 руб.

1482.38153 руб.

≥100:

1556.65322 руб.

1463.25403 руб.

≥200:

1526.13061 руб.

1434.56277 руб.

≥500:

1505.78220 руб.

1415.43527 руб.

≥1000:

1475.25959 руб.

1386.74401 руб.

From: 1475.25959 руб.

Description: The CM15TF-12H is a Mitsubishi IGBT module designed for high-speed switching applications. It features a high-speed switching time of 15ns and a low saturation voltage of 2.2V. Features:

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM300GB123D

MODULE

Semikron

00+

SEMITRANS IGBT Modules New Range

Utsource

≥1:

7842.42923 руб.

7371.88349 руб.

≥2:

7842.42923 руб.

7371.88349 руб.

≥5:

7319.60058 руб.

6880.42452 руб.

≥10:

7319.60058 руб.

6880.42452 руб.

≥20:

7319.60058 руб.

6880.42452 руб.

≥30:

7319.60058 руб.

6880.42452 руб.

≥50:

7319.60058 руб.

6880.42452 руб.

≥100:

7267.31767 руб.

6831.27861 руб.

≥500:

7215.03491 руб.

6782.13284 руб.

From: 7215.03491 руб.

SKM300GB123D is a module manufactured by Semikron. It is a three-phase inverter bridge module with a rated current of 300A and a voltage of 1200V. It is designed for use in motor drives, welding machi

Наличность:2000

Минимальное количество заказа:1

В избранное

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MG200H1AL2

MODULE

Toshiba America Electronic Components

N/A

TRANSISTOR 200 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68D1A, 3 PIN, BIP General Purpose Power

Utsource

≥1:

2351.85476 руб.

2210.74349 руб.

≥2:

2351.85476 руб.

2210.74349 руб.

≥5:

2273.45961 руб.

2137.05202 руб.

≥10:

2242.10155 руб.

2107.57547 руб.

≥20:

2226.42252 руб.

2092.83711 руб.

≥30:

2195.06446 руб.

2063.36056 руб.

≥50:

2195.06446 руб.

2063.36056 руб.

≥100:

2179.38543 руб.

2048.62235 руб.

≥500:

2163.70640 руб.

2033.88400 руб.

From: 2163.70640 руб.

Наличность:2000

Минимальное количество заказа:1

В избранное

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SKM75GB101D

MODULE

Semikron

SEMITRANS IGBT Modules New Range

Utsource

≥1:

3420.87975 руб.

3215.62695 руб.

≥2:

3420.87975 руб.

3215.62695 руб.

≥5:

3306.85047 руб.

3108.43939 руб.

≥10:

3261.23864 руб.

3065.56427 руб.

≥20:

3238.43287 руб.

3044.12694 руб.

≥30:

3192.82104 руб.

3001.25182 руб.

≥50:

3192.82104 руб.

3001.25182 руб.

≥100:

3170.01527 руб.

2979.81434 руб.

≥500:

3147.20935 руб.

2958.37685 руб.

From: 3147.20935 руб.

Description: The SKM75GB101D is a single-phase bridge rectifier module from Semikron. It has a blocking voltage of 1000V and a current rating of 75A. Features: Low forward voltage drop High su

Наличность:2000

Минимальное количество заказа:1

В избранное

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MG50G2CL3

MODULE

Others

N/A

Power and Industrial Semiconductors Data Book

Utsource

≥1:

2138.04982 руб.

2009.76677 руб.

≥2:

2138.04982 руб.

2009.76677 руб.

≥5:

2066.78156 руб.

1942.77473 руб.

≥10:

2038.27417 руб.

1915.97776 руб.

≥20:

2024.02054 руб.

1902.57935 руб.

≥30:

1995.51315 руб.

1875.78239 руб.

≥50:

1995.51315 руб.

1875.78239 руб.

≥100:

1981.25953 руб.

1862.38398 руб.

≥500:

1967.00590 руб.

1848.98557 руб.

From: 1967.00590 руб.

Description: The MG50G2CL3 is a 50A, 3-phase, IGBT module from Mitsubishi Electric. Features: High-speed switching Low power loss Low noise High reliability High surge capability Low inductance

Наличность:2000

Минимальное количество заказа:1

В избранное

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