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MITSUBISHI CM150RX1-12A is a power module with a voltage rating of 1200V and a current rating of 150A. It is designed for use in medium-voltage applications such as motor drives, power supplies, and U
Наличность:2000
Минимальное количество заказа:1
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MODULE
Toshiba America Electronic Components
Vces (volts) = 1200 ;; Ic (amps) = 25 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
Description: The MG25Q6ES51 is a 25A, 600V N-channel MOSFET module with a low on-resistance. It is designed for use in high-efficiency power supplies, motor drives, and other power switching applicati
Наличность:2000
Минимальное количество заказа:1
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Description: The BSM100GP60 is a high-performance insulated-gate bipolar transistor (IGBT) module from EUPEC. It is designed for use in high-power applications such as motor drives, welding, and unint
Наличность:2000
Минимальное количество заказа:1
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Description: This is a 25A, 600V, three-phase inverter module from Toshiba. Features: High-speed switching Low loss High reliability Low noise High efficiency High surge capability
Наличность:2000
Минимальное количество заказа:1
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The CM200DU-24F is a module manufactured by Mitsubishi. It is a power supply module that is used to convert AC power to DC power. It is designed to provide a reliable and cost-effective power supply s
Наличность:2000
Минимальное количество заказа:1
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Description: The BSM50GD60DLC is an insulated-gate bipolar transistor module from EUPEC. It is designed for use in motor drives, UPS, and other industrial applications. Features: High power densit
Наличность:2000
Минимальное количество заказа:1
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Description: The SKM100GB128D is a high-performance, high-power insulated-gate bipolar transistor (IGBT) module manufactured by Semikron. It is designed to provide high-power switching and fast switch
Наличность:2000
Минимальное количество заказа:1
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VUB72-16NO1 is a module manufactured by IXYS. It is a three-phase bridge rectifier module with a voltage rating of 1600V and a current rating of 72A. It is designed for use in motor control and power
Наличность:2000
Минимальное количество заказа:1
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MODULE
Eupec
62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode
Наличность:2000
Минимальное количество заказа:1
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The FZ400R12KS4 is a module manufactured by Infineon/Eupec. It is an insulated gate bipolar transistor (IGBT) module designed for use in medium-voltage applications. It features a maximum collector-em
Наличность:2000
Минимальное количество заказа:1
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MODULE
Eupec
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2-B10 is an insulated gate bipolar transistor (IGBT) module from EUPEC. It is a 1200V, 50A device with a maximum junction temperature of 150°C. Features: 1200V blocking
Наличность:2000
Минимальное количество заказа:1
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MODULE
Eupec
00+
IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 150.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;
BSM150GB60DLC is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a maximum current rating of 150A and a maximum voltage rating of 600V. It is designed for
Наличность:2000
Минимальное количество заказа:1
В избранное
MODULE
Eupec
10+
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi
Наличность:2000
Минимальное количество заказа:1
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Description: The BSM20GP60 is a high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 20A collector current Low on-state volta
Наличность:2000
Минимальное количество заказа:1
В избранное
The Mitsubishi CM100DY-12H is a 100A, IGBT module. It is designed for use in motor drives and other applications requiring high power control and fast switching times. It has a low on-state voltage dr
Наличность:2000
Минимальное количество заказа:1
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The CM150DY-12H is a module manufactured by Mitsubishi. It is a power module designed for use in inverter circuits. It is a 150A, 1200V, N-channel IGBT module with a built-in fast recovery diode. It h
Наличность:2000
Минимальное количество заказа:1
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MODULE
Fairchil
15+
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Fairchild FSAM30SH60A is a 600V Fast Switching Diode Module that features high surge capability and low power losses. It is designed for use in switching applications such as motor control, welding an
Наличность:2000
Минимальное количество заказа:1
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MODULE
Eupec
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FS25R12W1T4 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a maximum collector-emitter voltage of 1200V and a maximum collector c
Наличность:2000
Минимальное количество заказа:1
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Description: The CM50MXB2-24A is a module from MIT that is designed for use in a wide range of applications. It is a 50A, 24V DC module with a maximum current of 50A and a maximum voltage of 24V DC.
Наличность:2000
Минимальное количество заказа:1
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Наличность:2000
Минимальное количество заказа:1
В избранное
Остановить производство экспертов, мы можем предоставить большое количество электронных компонентов, которые были остановлены производства и которые трудно найти, чтобы облегчить обслуживание компании