IGBT Modules up to 1600V / 1700V Dual; Package: A-IHM130-2; IC max: 1,200.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: IHM 130 mm;

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FF450R17ME3

MODULE

Semikron

IGBT Modules up to 1600V / 1700V Dual; Package: AG-ECONOD-3; IC max: 450.0 A; VCEsat typ: 2.0 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL 3;

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FD1056A

MODULE

HIT

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The FD1056A is a HIT module manufactured by FUJITSU. It is a high-performance, low-power, single-chip, CMOS microcontroller with a 16-bit CPU core. It is designed for use in embedded systems and is su

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BSM181R

MODULE

Siemens

SIMOPAC Module Power module Single switch N channel Enhancement mode

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FZ1200R16KF4

MODULE

Eupec

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.2KA IC

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FZ3600R17KE3

MODULE

IGBT Modules up to 1600V / 1700V Single; Package: A-IHM190-2; IC max: 3,600.0 A; VCEsat typ: 2.0 V; Configuration: Single Modules; Technology: IGBT3; Housing: IHM 190 mm;

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FZ600R65KF2

MODULE

Eupec

IGBT Modules up to 6500V Single; Package: A-IHV190-3; IC max: 600.0 A; VCEsat typ: 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 190 mm;

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FF400R12KT3

MODULE

Eupec

IGBT-inverter

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Description: The FF400R12KT3 is an insulated-gate bipolar transistor (IGBT) module from Eupec. It is a three-phase inverter module with a maximum current rating of 400A. Features: Low switching loss

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FF800R12KF4

MODULE

Eupec

IGBT Modules up to 1200V Dual ; Package: A-IHM130-2; IC max: 800.0 A; VCEsat typ: 2.7 V; Configuration: Dual Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;

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CM800E2U-24F

MODULE

Mitsubishi

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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FZ1600R17KF6C-B2

MODULE

Eupec

IGBT Modules up to 1200V Single; Package: A-IHM130-2; IC max: 1,600.0 A; VCEsat typ: 2.7 V; Configuration: Single Modules; Technology: IGBT2 Standard; Housing: IHM 130 mm;

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Description: This is an EUPEC module manufactured by Infineon Technologies. It is a 1600V, 17kA, IGBT module with a fast-recovery diode. Features: * 1600V blocking voltage * 17kA short-circui

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CM50FL6-12NFH

MODULE

Mitsubishi

G-3 1/2 Miniature 2 Pin Base

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Description: The CM50FL6-12NFH is a Mitsubishi IGBT module designed for high-speed switching applications. It features a high-speed switching IGBT with an integrated fast recovery diode. Features: H

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MG50Q2YS43

MODULE

WIRE, ETFE, TEFZEL, 12AWG, BLACK, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes

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FS75R12KT3G

MODULE

Infineon Technologies AG

IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3 Fast; Housing: EconoPACK 3;

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Description: Infineon IGBT Module Features: Low switching losses Low on-state resistance High surge current capability High short-circuit withstand capability High temperature operation H

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FF150R12KS4-B2

MODULE

Eupec

62mm C-series module with the fast IGBT2 for high-frequency switching

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CM50E3Y-24E

MODULE

Mitsubis

02+

Chopper IGBTMOD 50 Amperes/1200 Volts

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Description: The CM50E3Y-24E is a module manufactured by Mitsubishi. It is a 50A, 3-phase, AC contactor with an AC coil voltage of 24V. Features: 50A rated current 3-phase AC contactor AC coil vo

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BSM50GP120DN2

MODULE

High Voltage Rectifer Diodes

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The BSM50GP120DN2 is a power module manufactured by Infineon Technologies. It is a 1200V, 50A, 2-in-1 IGBT module with a built-in diode. The module is designed for applications such as motor drives, U

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