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Country CodeTOSHIBA
UNISONIC TECHNOLOGIES
NEC
Your search 2SC1923 and relate product result :13 items
TO-92
Micro Electronics Corporation
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN, TO-92,
Stock:10000
Minimum:4
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Stock:3128
Minimum:4
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Stock:18000
Minimum:15
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Stock:4843
Minimum:15
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Description: 2SC1923-R is a NPN silicon epitaxial transistor manufactured by Toshiba. Features: - High current gain - Low collector-emitter saturation voltage - High breakdown voltage - High frequenc
Stock:560
Minimum:15
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Stock:10000
Minimum:4
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Description: 2SC1923-R is a NPN silicon epitaxial transistor manufactured by Toshiba. Features: - High current gain - Low collector-emitter saturation voltage - High breakdown voltage - High frequenc
Stock:10000
Minimum:2
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Description: The 2SC1923-Y is a NPN silicon epitaxial transistor manufactured by Secos Corporation. Features: High breakdown voltage Low saturation voltage High current gain Low noise High swit
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Stock:5000
Minimum:21
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Stock:5000
Minimum:21
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Stock:2000
Minimum:10
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Description: 2SC1923-R is a NPN silicon epitaxial transistor manufactured by Toshiba. Features: - High current gain - Low collector-emitter saturation voltage - High breakdown voltage - High frequenc
Stock:204
Minimum:7
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Stock:84
Minimum:4
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