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Country CodeINTERNATIONAL RECTIFIER
VISHAY
Your search 50RIA and relate product result :80 items
Description: 50RIA80M is a TO-65 package, N-channel insulated gate field effect transistor (IGFET) manufactured by International Rectifier (IR). Features: - Low on-resistance - Low gate charge - Low
Stock:2000
Minimum:1
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Description: 50RIA120 is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It is a high-voltage, high-speed, low-loss, and low-inductance IGBT module with a TO-
Stock:5000
Minimum:1
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Description: The 50RIA120 is an ultrafast recovery rectifier diode with a maximum reverse recovery time of 50ns. It is designed for use in high frequency switching power supplies, converters, and free
Stock:5000
Minimum:1
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Package: TO-65 Manufacturer: IR (International Rectifier) Description: The 50RIA20 is a TO-65 package from International Rectifier. It is a high voltage, fast recovery rectifier diode with a maxi
Stock:5000
Minimum:1
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Stock:2000
Minimum:1
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Stock:12
Minimum:1
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50RIA120S90 is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It is designed for use in high power applications such as motor control, welding, and solar inv
Stock:5000
Minimum:1
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Description: The 50RIA120 is an insulated gate bipolar transistor (IGBT) module with a TO-65 package. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 50A. Featu
Stock:5000
Minimum:1
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Package: TO-65 Manufacturer: IR (International Rectifier) Description: The 50RIA20 is a TO-65 package from International Rectifier. It is a high voltage, fast recovery rectifier diode with a maxi
Stock:10000
Minimum:1
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Description: 50RIA80M is a TO-65 package, N-channel insulated gate field effect transistor (IGFET) manufactured by International Rectifier (IR). Features: - Low on-resistance - Low gate charge - Low
Stock:2000
Minimum:1
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Description: The 50RIA60 is a fast-recovery rectifier diode with a maximum reverse recovery time of 50ns. Features: - Maximum repetitive peak reverse voltage of 600V - Maximum average forward current
Stock:2000
Minimum:1
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Description: 50RIA80M is a TO-65 package, N-channel insulated gate field effect transistor (IGFET) manufactured by International Rectifier (IR). Features: - Low on-resistance - Low gate charge - Low
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Stock:310
Minimum:1
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Stock:109
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company