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Country CodeON SEMICONDUCTOR
VISHAY
EUPEC
STMICROELECTRONICS
INFINEON
PHILIPS
MOTOROLA
INTERNATIONAL RECTIFIER
FAIRCHILD
HARRIS SEMICONDUCTOR
Your search 60N06 and relate product result :126 items
Package Type: TO-263 Manufacturer: IR/ST Description: The 60N06 is a N-channel enhancement mode power MOSFET. It is designed for use in switching applications and is suitable for use in a wide range
Stock:10000
Minimum:2
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Stock:101
Minimum:4
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Stock:6913
Minimum:8
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Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Low Input Capacitance High Power and Current Handling Capability RoHS Compliant Applicatio
Stock:10000
Minimum:5
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Description: N-Channel MOSFET Transistor Features: Low On-Resistance Low Gate Charge Fast Switching 100% Avalanche Tested RoHS Compliant Halogen Free Applications: DC-DC Converters Motor Cont
Stock:10000
Minimum:2
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TO-220
Harris
99+
60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
Description: The RFP60N06 is a N-channel enhancement mode power field effect transistor manufactured by Harris Semiconductor. Features: 60V drain-source voltage 60A continuous drain current
Stock:10000
Minimum:3
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TO-220
National Semiconductor Corporation
00+
TRANSISTOR 50 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
Stock:10000
Minimum:2
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Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Lead-Free, RoHS Compliant Halogen Free 175°C Operating Temperature Applications: DC-DC Converters Motor
Stock:10000
Minimum:3
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MTP60N06 is a N-channel enhancement mode power MOSFET transistor manufactured by STMicroelectronics. It is designed for use in applications such as switching, power management, and motor control. Des
Stock:10000
Minimum:2
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Description: The SMP60N06-18 is a N-channel enhancement mode power MOSFET with low on-resistance, high speed switching, and low gate charge. Features: Low on-resistance High speed switching Low ga
Stock:10000
Minimum:2
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Stock:20646
Minimum:6
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Stock:10000
Minimum:1
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Description: N-Channel 60V, 0.0015 Ohm, Logic Level, Power MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Logic Level Gate Drive RoHS Compliant Halogen-Free Application: DC-
Stock:10000
Minimum:2
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TO263
Vishay Intertechnologies
98+
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Description: The SUB60N06-08 is a N-channel MOSFET with a maximum drain source voltage of 60V and a maximum drain current of 30A. It is designed for use in power switching applications. Features: Lo
Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Description: This is a N-channel enhancement mode power field effect transistor with a low on-resistance and low gate charge. It is designed for use in high-efficiency switch mode power supplies, DC-D
Stock:10000
Minimum:2
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Description: N-Channel MOSFET Features: Low On-Resistance Low Input Capacitance Low Input and Output Leakage Currents Low Gate Threshold Voltage High Speed Switching RoHS Complian
Stock:10000
Minimum:2
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company