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Country CodePHILIPS
NXP
Your search BFG591 and relate product result :7 items
Description: The BFG591 is a N-channel enhancement mode Field-Effect Transistor (FET) from NXP Semiconductors. Features: * Low on-resistance * Low gate charge * Low input capacitance * Fast switching
Stock:10000
Minimum:10
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Description:The BFG591 is a NPN Darlington transistor developed by Philips Semiconductors. A Darlington transistor is a type of transistor that combines two transistors into a single component to incr
Stock:10000
Minimum:2
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SOT-223/SC-73
Nxp/philips
08+ROHS
BFG591 NPN Transistors(BJT) 20V 200mA/0.2A 7GHz 60~250 SOT-223/SC-73 marking BFG591 high powergain low noise coefficient
Stock:31
Minimum:5
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Description: BFG591 is a NPN silicon planar epitaxial transistor in a SOT223 package. Features: High current gain Low collector-emitter saturation voltage High switching speed Low noise H
Stock:10000
Minimum:3
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The BFG591T/R is a NPN silicon transistor manufactured by Infineon Technologies. It is a general purpose transistor with a maximum collector current of 0.5A and a maximum collector-emitter voltage of
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company