≥1:
US $3.63220
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeINFINEON
SIEMENS
Your search BTS410F2 and relate product result :8 items
TO220-5
Infineon Technologies AG
Smart Highside Power Switch Overload protection Current limitation Short circuit protection Thermal shutdown
Description: N-Channel Enhancement Mode Field Effect Transistor Features: Low On-Resistance Low Gate Charge Fast Switching Avalanche Rated ESD Protected Applications: DC-DC Converters Motor Con
Stock:10000
Minimum:1
Favorite
Stock:10000
Minimum:1
Favorite
Description: BTS410F2E3062A is a N-channel enhancement mode vertical D-MOSFET transistor manufactured by Infineon Technologies. Features: Low on-resistance Low gate charge Low threshold voltage H
Stock:10000
Minimum:2
Favorite
Description: BTS410F2NKSA1 is a N-channel enhancement mode vertical DMOS FET with a maximum drain current of 4A. Features: Low on-state resistance Low gate charge Fast switching Low therm
Stock:10000
Minimum:2
Favorite
Description: The BTS410F2E3043 is a N-channel enhancement mode vertical DMOS transistor in a TO-220 plastic package. Features: * Low on-resistance * Low gate charge * Low gate input capacitance * Fas
Stock:10000
Minimum:1
Favorite
Favorite
Favorite
TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Infineon Technologies
IC HIGH SIDE PWR SWITCH T0263-5
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company