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Country CodeINFINEON
SIEMENS
Your search BTS442E2 and relate product result :17 items
TO263-5
Infineo
11+
Smart Highside Power Switch Overload protection Current limitation Short-circuit protection Thermal shutdown
Description: BTS442E2 is an N-channel logic level enhancement mode field effect power transistor. Features: - Low on-resistance - High current capability - Low gate charge - Fast switching - Logic le
Stock:2000
Minimum:5
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TO-220
Siemens
01+
Smart Highside Power Switch Overload protection Current limitation Short-circuit protection Thermal shutdown
Manufacturer: SIEMENS Description: This is a N-channel Power Field-Effect Transistor (PFET) that operates in the TO-220 package. Features: - VDS (max): 100 V - ID (max): 5.0 A - RDS(on)(max)
Stock:10000
Minimum:1
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Description: BTS442E2 is a N-channel enhancement mode vertical DMOS transistor with a low on-state resistance. Features: - Low on-state resistance - High power density - Low gate charge - Low gate in
Stock:1969
Minimum:2
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TO263-5
Infineo
Smart Highside Power Switch Overload protection Current limitation Short-circuit protection Thermal shutdown
Description: The BTS442E2 E3062A is an N-channel logic level enhancement mode power field effect transistor (FET) with an integrated temperature sensor. It is designed for use in automotive applicatio
Stock:2000
Minimum:1
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Description: The BTS442E2 E3062A is a N-channel power MOSFET from Siemens. It is designed for use in automotive applications and has a TO-263-5 package. Features: N-channel Low on-state resistanc
Stock:10000
Minimum:2
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Description: N-Channel Logic Level FET Features: Low On-Resistance Low Input Capacitance Low Input and Output Leakage Low Threshold Voltage Fast Switching ESD Protection AEC-Q101 Qualified Appl
Stock:10000
Minimum:2
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The BTS442E2E3062A is a N-channel enhancement mode vertical DMOS transistor in a TO-220 package. It is designed for use in automotive applications. Features: * Low RDS(on) * Low gate charge * High cu
Stock:10000
Minimum:1
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Stock:1995
Minimum:5
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Stock:2000
Minimum:5
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TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Infineon Technologies
IC HIGH SIDE PWR SWITCH TO263-5
Description: The BTS442E2E3062ABUMA1 is a N-channel logic level enhancement mode power field-effect transistor (FET) manufactured by Infineon Technologies. It is designed for use in applications such
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Description: The BTS442E2BKSA1 is a N-channel enhancement mode power MOSFET from Infineon Technologies. It is designed for use in a wide range of applications such as motor control, lighting, and p
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company