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Country CodeFAIRCHILD
Your search FDMS3669S and relate product result :3 items
QFN8
Fairchild
1816+
PowerTrench? Dual N-Channel MOSFET, Fairchild Semiconductor PowerTrench? MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench? MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. The soft body diode performance of the PowerTrench? MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Description: FDMS3669S is a low-side N-channel MOSFET which is manufactured by Fairchild Semiconductor. Features: - Low on-resistance - Low gate charge - Fast switching - Low input capacitance - Low
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Power 56
Fairchild Semiconductor
PowerTrench? Dual N-Channel MOSFET, Fairchild Semiconductor PowerTrench? MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench? MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. The soft body diode performance of the PowerTrench? MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
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