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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search IRFB31N20D and relate product result :15 items
TO220
International Rectifier
2002
Power MOSFETVdss=200V, Rdsonmax=0.082ohm, Id=31A
Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Low On-Resistance: RDS(on) = 0.09 Ohm Low Gate Charge: Qg = 6.7 nC Low Input Capacitance:
Stock:10000
Minimum:2
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Stock:1940
Minimum:10
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Stock:10000
Minimum:2
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TO220
Ir/infineon
18-21+
Power MOSFETVdss=200V, Rdsonmax=0.082ohm, Id=31A
Stock:10000
Minimum:1
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Stock:50038
Minimum:10
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Description: This is a N-Channel MOSFET transistor manufactured by International Rectifier. Features: Low On-Resistance: RDS(on) = 0.09 Ohm Low Gate Charge: Qg = 6.7 nC Low Input Capacitance:
Stock:698
Minimum:3
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Stock:50
Minimum:2
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TO-220
International Rectifier
new cycle
Stock:10000
Minimum:1
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TO-220
International Rectifier
19+
Power MOSFETVdss=200V, Rdsonmax=0.082ohm, Id=31A
Description: The IRFB31N20DPBF is a N-channel Power MOSFET designed to provide high power switching and excellent switching performance. It is manufactured using advanced planar stripe and DMOS techn
Stock:10000
Minimum:1
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TO-220
International Rectifier
06+
HEXFET Power MOSFET VDSS = 200V , RDSonmax = 0.082ヘ , ID = 31A
Description: N-Channel 200V 20A (Tc) 175W (Tc) Through Hole TO-220AB Features: Low Gate Charge Fast Switching 175°C Operating Temperature Avalanche Rated RoHS Compliant Applications: Swi
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Stock:6
Minimum:2
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