IRGIB10B60KD1
TO-220F
Infineon Technologies AG
22+
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Country CodeINTERNATIONAL RECTIFIER
INFINEON
Your search IRGIB10B60KD1 and relate product result :9 items
Stock:12889
Minimum:5
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TO-220F
International Rectifier
2010+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: IGBT Transistor, N-Channel, 600V, 10A, TO-220F Features: Low gate charge Low saturation voltage Short circuit withstand time High current handling capability Low noise High speed sw
Stock:10000
Minimum:2
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TO-220F
International Rectifier
11+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: This is an insulated gate bipolar transistor (IGBT) module with a TO-220F package. It is manufactured by Infineon Technologies. Feature: Low on-state resistance High switching speed L
Stock:10000
Minimum:2
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Stock:6
Minimum:2
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TO-220F
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Description: IGBT, 600V, 10A, TO-220F Features: - Low saturation voltage - High speed switching - Low gate charge - High current capability - Low thermal resistance - High input impedance - High relia
Stock:10000
Minimum:2
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Stock:8563
Minimum:30
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TO-220F
International Rectifier
11+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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TO-220
International Rectifier
new cycle
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TO-220
International Rectifier
13+
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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