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Country CodeTOSHIBA
HARRIS SEMICONDUCTOR
FUJITSU
Your search K10A60D and relate product result :35 items
Description: N-Channel MOSFET Features: High speed switching Low on-resistance Logic level gate drive Low drain-source capacitance High avalanche energy Application: Switched mode power supplies
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Description: TK10A60D is a 600V, 10A, N-Channel MOSFET in a TO-220F package. Features: Low On-Resistance Low Gate Charge Low Input Capacitance High Current Capability Fast Switching Speed Avalan
Stock:5000
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TO-220F
Toshiba America Electronic Components
TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
Description: TK10A60D is a 600V, 10A N-Channel Power MOSFET from Toshiba. Features: - Low on-resistance - Low gate charge - High speed switching - Avalanche energy rated - Low drain-source ca
Stock:10000
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Description: TK10A60D is a high voltage, high speed, N-channel power MOSFET transistor. Features: Low on-resistance Low gate charge Low input capacitance High speed switching Avalanche energy ra
Stock:10000
Minimum:3
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Description: TK10A60D is a 600V, 10A N-channel MOSFET with a TO-220F package. Features: Low on-resistance Low gate charge Low input capacitance Fast switching speed High avalanche energy capabil
Stock:10000
Minimum:3
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Stock:10000
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Stock:14
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