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Country CodeSTMICROELECTRONICS
FAIRCHILD
ON SEMICONDUCTOR
UNISONIC TECHNOLOGIES
Your search MJE3055T and relate product result :17 items
Description: NPN Power Transistor Features: High DC Current Gain Low Saturation Voltage High Collector-Emitter Voltage Low Collector-Emitter Saturation Voltage High Switching Speed High Reliabil
Stock:10000
Minimum:5
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Description: The MJE3055T is a silicon epitaxial-base NPN power transistor in a TO-220 plastic package. Features: High DC Current Gain Low Saturation Voltage High Switching Speed High Reliability
Stock:10000
Minimum:2
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Stock:10
Minimum:10
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Stock:11980
Minimum:5
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Stock:549
Minimum:4
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Stock:9580
Minimum:10
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Stock:8800
Minimum:50
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Stock:100
Minimum:4
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Stock:250
Minimum:7
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Stock:25800
Minimum:6
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Description: The MJE3055T is a NPN silicon epitaxial-base transistor designed for use in switching and amplifier applications. Features: High voltage rating of 800V Low collector-emitter saturation
Stock:10000
Minimum:2
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TO-220
On Semiconductor
Bipolar Power TO220 NPN 10A 60V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50
Description: The MJE3055TG is a NPN silicon power transistor in a TO-220 package. Features: - High DC Current Gain - Low Saturation Voltage - High Switching Speed - High Reliability - Low Noise - High
Stock:10000
Minimum:3
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Description: NPN Power Transistor Features: High DC Current Gain High Current Capability Low Saturation Voltage High Voltage Capability Low Thermal Resistance High Reliability Applications: Swi
Stock:10000
Minimum:4
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TO220
FSC
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail
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Stock:271
Minimum:8
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Stock:99
Minimum:5
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