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Country CodeMOTOROLA
FREESCALE SEMICONDUCTOR
ON SEMICONDUCTOR
NXP
Your search MRF151 and relate product result :25 items
Description: The MRF151 is a high-power field effect transistor (FET) designed for use in RF power amplifiers in the VHF and UHF bands. Features: High gain and efficiency Low thermal resistance Hi
Stock:2000
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Stock:300
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Description: The MRF1518 is a high power N-Channel enhancement mode lateral MOSFET designed for VHF and UHF class AB linear amplifier applications. Features: High Gain: 12.5 dB Typ @ 150 MHz Low Noi
Stock:5000
Minimum:1
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RF TRANSISTOR
Motorola
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Description: The MRF151G is a high power RF Transistor manufactured by Motorola. Features: Medium gain (5.5 dB typ.) Ruggedness, high efficiency Low thermal resistance 150 W CW Class C Opera
Stock:2000
Minimum:1
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Stock:99
Minimum:1
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Description: The MRF151G is a high power N-Channel RF power MOSFET transistor from Motorola. Features: High power gain Low thermal resistance High breakdown voltage Low gate charge Low output ca
Stock:2000
Minimum:1
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Stock:10000
Minimum:1
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RF TRANSISTOR
Motorola
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
Description: RF Transistor, MOT Features: High Gain High Power Output Low Noise Figure High Efficiency High Reliability Low Parasitic Capacitance Applications: Amplifiers
Stock:2000
Minimum:1
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Description: The MRF1518T1 is a high power, N-Channel, enhancement-mode, RF power MOSFET transistor manufactured by Motorola. Features: * High power gain * Low gate-source capacitance * Low thermal r
Stock:5000
Minimum:1
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Description: The MRF1517NT1 is a high-power, N-channel, enhancement-mode, field-effect transistor (FET) designed for RF power amplifier applications in the 1.8 to 2.2 GHz frequency range. Features: *
Stock:5000
Minimum:1
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Description: The MRF1511 is a N-Channel Enhancement Mode Lateral MOSFET designed for RF power amplifier applications in the 800-1000 MHz frequency range. Features: N-Channel Enhancement Mode Lateral
Stock:5000
Minimum:1
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Description: The MRF1517 is a high power N-Channel Enhancement Mode Lateral MOSFET designed for broadband commercial and industrial applications. Features: High power gain Low thermal resistance
Stock:5000
Minimum:1
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Description: The MRF1513NT1 is a high-power, N-channel enhancement-mode MOSFET designed for use in RF power amplifiers. It is manufactured using NXP Semiconductors' advanced PowerTrench process, wh
Stock:10000
Minimum:1
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Description: The MRF151G is a high power N-Channel RF transistor designed for use in industrial, scientific and medical (ISM) applications. Features: High power gain Low noise figure High efficien
Stock:2000
Minimum:1
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The MRF1518NT1 is a high power, freescale, N-channel enhancement mode RF power MOSFET designed for use in RF power amplifiers. Features: High power gain Low thermal resistance Low gate charg
Stock:10000
Minimum:1
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The MRF151G is a high-power, high-frequency transistor manufactured by M/A-COM. It is designed for use in RF power amplifiers, oscillators, and other high-frequency applications. The MRF151G is a sil
Stock:2000
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Stock:850
Minimum:100
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