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Country CodeMITSUBISHI
Your search RA30H2127M and relate product result :7 items
Description: RA30H2127M is a high-power RF amplifier module manufactured by Mitsubishi Electric. It is designed for use in a variety of wireless communication applications such as cellular base statio
Stock:2000
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Description: The RA30H2127M1 is a 30W RF power transistor module from Mitsubishi Electric. Features: High output power of 30W High gain of 18dB Low noise figure of 3.5dB High efficiency of up to
Stock:2000
Minimum:1
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Stock:126
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Stock:250
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Description: The RA30H2127M1-501 is a RF power transistor module manufactured by Mitsubishi. It is designed for use in the VHF and UHF bands. Features: High power output High gain High efficiency
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company