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Country CodeVISHAY
SIGNETICS
Your search SI4920DY and relate product result :9 items
Description: The SI4920DY is a N-channel enhancement-mode vertical DMOS FET. Features: Low On-Resistance: RDS(on) = 0.7 Ω (max) @ VGS = 10 V Low Gate Charge: Qg = 4.5 nC (max) @ VGS = 10 V Low Thr
Stock:10000
Minimum:3
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Description: The SI4920DY is a N-channel enhancement-mode vertical DMOS FET. Features: Low On-Resistance: RDS(on) = 0.7 Ω (max) @ VGS = 10 V Low Gate Charge: Qg = 4.5 nC (max) @ VGS = 10 V Low Thr
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Stock:290
Minimum:6
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Stock:290
Minimum:6
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SO-8
Vishay Siliconix
08+
FET SO-8 DUAL N-CHANNELL 30V MOSFET
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SOP8
SI
05+
MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.9A; On-Resistance, Rdson:0.025ohm; Rdson Test Voltage, Vgs:10V; Package/Case:SO-8; Drain-Source Breakdown Voltage:30V
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SOP8
Vishay Siliconix
07+
MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.9A; On-Resistance, Rdson:0.025ohm; Rdson Test Voltage, Vgs:10V; Package/Case:SO-8; Drain-Source Breakdown Voltage:30V
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