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Country CodeFAIRCHILD
HARRIS SEMICONDUCTOR
ON SEMICONDUCTOR
INTERSIL
Your search 10N120BND and relate product result :15 items
Description: This is a N-Channel MOSFET with a maximum drain current of 120A and a maximum drain-source voltage of 1000V. Features: Low on-state resistance Low gate charge High current handling cap
Stock:10000
Minimum:2
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Stock:1790
Minimum:5
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Stock:10000
Minimum:1
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Stock:41
Minimum:4
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Stock:84
Minimum:1
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Stock:10000
Minimum:2
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TO-247
Fairchil
35A, 1200V, NPT Series N-channel Igbt With Anti-parallel Hyperfast Diode
Description: IGBT Transistor, N-Channel, 1200 V, 10 A, TO-247 Features: Low gate charge Low switching losses High speed switching Improved dv/dt capability Avalanche rated RoHS compliant Applica
Stock:10000
Minimum:2
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Description: This is an IGBT module with a TO-247 package. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 10A. Features: 1200V Collector-Emitter Voltage 10A C
Stock:5000
Minimum:10
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Stock:1000
Minimum:5
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Stock:21225
Minimum:1
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Stock:1900
Minimum:10
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Stock:371
Minimum:1
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Stock:2000
Minimum:5
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Stock:321
Minimum:3
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company