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Home > Elec-component > IC Chips > PMIC - Power Distribution Switches, Load Drivers
PowerSO
STMicroelectronics
The VN808CM-E is an octal-channel High-side Driver. It is designed in STMicroelectronics VIPower M0-3 technology and intended to drive any kind of load with one side connected to ground. It can be driven by using a 3.3V logic supply. Active current limitation combined with thermal shutdown and automatic restart, protect the device against over-load. In over-load conditions, the channel turns OFF and ON again automatically so to maintain the junction temperature between TTSD and TR. If this condition makes case temperature reach TCSD, over-loaded channel is turned OFF and ON if the case temperature decreases down to TCR. Non-over-loaded channels continue to operate normally. The device automatically turns OFF in case of ground pin disconnection.
The VN808CM-E is a monolithic integrated circuit from STMicroelectronics. It is a high-voltage, high-speed, low-power, low-side switch designed for automotive applications. Description: The VN808CM-
Stock:2000
Minimum:1
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Stock:10000
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Description: The MC15XS3400DHFK is an integrated power management IC (PMIC) from NXP USA. It is a highly integrated, low quiescent current, high efficiency, dual-channel, synchronous buck converter wi
Stock:5000
Minimum:1
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Description: BUK214-50Y,118 is a N-Channel Power MOSFET transistor manufactured by NXP USA. Features: Low on-state resistance Low gate charge Fast switching speed High current capability
Stock:10000
Minimum:2
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Description: The VN750 is a N-channel enhancement mode vertical DMOS transistor with a low on-state resistance and a high avalanche energy rating. Features: Low on-state resistance High avalanche e
Stock:10000
Minimum:1
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The VNQ830E-E is a dual N-channel enhancement mode vertical DMOS FET manufactured by STMicroelectronics. It is available in a SOP-28 package and has a maximum drain-source voltage of 30V. The devic
Stock:10000
Minimum:2
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Description: The MC33880DW is a high-voltage, high-current, low-side, MOSFET driver with integrated protection features. Features: High-voltage capability up to 600 V High-current capability up to
Stock:10000
Minimum:1
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Description: The VN21 is a N-channel enhancement mode vertical DMOS transistor in a TO-220 package. Features: - Low on-state resistance - Low gate charge - Low threshold voltage - Fast switching App
Stock:10000
Minimum:1
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Description: The UDK2559LB is a high-performance, low-power, single-channel, low-side, MOSFET driver with integrated current-sense amplifier. Features: Low-side MOSFET driver Integrated current-sen
Stock:2000
Minimum:1
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Stock:10000
Minimum:2
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Description: The IR6220STRL is a N-Channel Enhancement Mode Field Effect Transistor (FET) from Infineon Technologies. It is a TO-263-5 package and is designed for use in power switching application
Stock:10000
Minimum:2
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Description: RT9702AGB is a high performance, low dropout regulator with a wide input voltage range of 2.5V to 6.5V. It is available in a SOT23-5 package. Features: Wide input voltage range: 2.5V t
Stock:10000
Minimum:2
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Description: The RT9715EGB is a high-efficiency, low-dropout (LDO) linear regulator with a low quiescent current. Features: Output voltage accuracy: ±1.5% Low quiescent current: 20μA Low dropout v
Stock:10000
Minimum:4
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Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Avalanche Rated RoHS Compliant Applications: DC/DC Converters Motor Control Load Switching Power Manag
Stock:10000
Minimum:2
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Description: RT9724GB is a high-efficiency, low-noise, low-dropout linear regulator with built-in power MOSFET. It is available in a SOT23-6 package. Features: Low Dropout Voltage: 0.4V (Typ.) Low
Stock:10000
Minimum:2
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HSOP
STMicroelectronics
Power ICs, High-Side Power Switches, STMicroelectronics High-side switches can safely drive high currents in resistive, inductive and capacitive grounded loads. Designed to work in the harsh automotive environment they requires both robust, low on-resistance power switch and accurate analogue circuitry for diagnostic, protection and control functions.
Description: The VND830ASP-E is a high-side power switch with integrated protection features. Features: Low on-resistance Over-current protection Over-temperature protection Under-voltage
Stock:5000
Minimum:1
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Description: BTS410F2NKSA1 is a N-channel enhancement mode vertical DMOS FET with a maximum drain current of 4A. Features: Low on-state resistance Low gate charge Fast switching Low therm
Stock:10000
Minimum:2
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TO-220
Infineon Technologies AG
Automotive Intelligent Power Switch, High-Side Simple high-side MOSFET switches, but with protection against most destructive influences built-in. Automotive qualified to AEC-Q100. Over temperature shutdown Short circuit protection (current limit shutdown) Active clamp ESD protection Standards AEC-Q100
Description: The AUIR3315 is an advanced high voltage integrated circuit from Infineon Technologies AG. It is a three-phase brushless DC motor driver with integrated MOSFETs and is designed for automo
Stock:10000
Minimum:1
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TO-220
STMicroelectronics
The VNP14NV04-E is a N-channel OMNIFET low Power MOSFET uses STMicroelectronics VIPower? M0 technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
Description: The VNP14NV04-E is a N-channel enhancement-mode vertical DMOS transistor in a TO-220 package. Features: Low on-resistance Low gate charge Fast switching Avalanche rated ESD protecte
Stock:10000
Minimum:2
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NCV7601PG is a low-dropout (LDO) linear voltage regulator from On Semiconductor. It is a fixed output voltage regulator with a voltage output of 1.8V. The device has a maximum output current of 500mA
Stock:10000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company