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Home > Elec-component > Modules > IGBT
MODULE
Mits
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Type = Igbt Module ;; Voltage = 1200V ;; Current = 200A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves =
CM200DY-24NF is a module manufactured by Mitsubishi. It is a 200A, 600V, 3-phase, IGBT module. It has a high power density and is suitable for use in motor control, inverter, UPS, and other applicatio
Stock:2000
Minimum:1
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Stock:2000
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MODULE
Toshiba America Electronic Components
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TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG50J2YS45 is a 50A, 600V, three-phase IGBT Module manufactured by Toshiba America Electronic Components. Features: Low switching loss High speed switching Low noise High r
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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The CM200DU-24F is a module manufactured by Mitsubishi. It is a power supply module that is used to convert AC power to DC power. It is designed to provide a reliable and cost-effective power supply s
Stock:2000
Minimum:1
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Description: SKM100GA121D is a 1200V, 100A, 3-phase IGBT module from Semikron. Features: 1200V blocking voltage 100A continuous current Low inductance design Low thermal resistance
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MODULE
Eupec
N/A
IGBT Power Module Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes
BSM200GB120DL is an IGBT module manufactured by EUPEC. It is a high-power, high-speed, and high-efficiency module designed for use in motor control, UPS, welding, and other applications. Description:
Stock:2000
Minimum:1
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SKM151F is a 3-phase bridge rectifier module manufactured by Semikron. It is a compact, high-performance module with a high surge current capability. It is designed for use in motor drives, UPS system
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: The SKMD150F12 is a three-phase bridge rectifier module from Semikron. It has a maximum current rating of 150A, a forward voltage drop of 1.2V, and a reverse voltage of 600V. Features:
Stock:2000
Minimum:1
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Description: This is a power module from Mitsubishi Electric. It is a three-phase inverter module with a rated output of 75kW. Features: Rated output of 75kW Three-phase inverter Low noise and
Stock:2000
Minimum:1
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MODULE
Eupec
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IGBT Modules up to 600V Dual; Package: AG-34MM-1; IC max: 150.0 A; VCEsat typ: 1.95 V; Configuration: Dual Modules; Technology: IGBT2 Low Loss ; Housing: 34 mm;
BSM150GB60DLC is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a maximum current rating of 150A and a maximum voltage rating of 600V. It is designed for
Stock:2000
Minimum:1
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Description: The BSM20GP60 is a high-voltage, high-speed, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 600V blocking voltage 20A collector current Low on-state volta
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
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TRANSISTOR 25 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG25N6ES42 is a 25A, 600V N-channel IGBT module from Toshiba America Electronic Components. Features: Low on-state resistance Low switching losses High speed switching High
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 200 A, 550 V, NPN, Si, POWER TRANSISTOR, 2-68D1A, 3 PIN, BIP General Purpose Power
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Description: The MG50G2CL3 is a 50A, 3-phase, IGBT module from Mitsubishi Electric. Features: High-speed switching Low power loss Low noise High reliability High surge capability Low inductance
Stock:2000
Minimum:1
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