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Home > Elec-component > Modules > IGBT
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Description: MG60M1AL1 is a module manufactured by Mitsubishi Electric. It is a three-phase brushless motor driver module. Features: High speed and high torque operation Overload protection Built-
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Description: The BSM300GB120DLC-E3256 is a three-phase IGBT module from EUPEC. Features: 1200V blocking voltage 30A continuous collector current Low switching losses High short circuit capability
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Description: The MG50Q1BS11 is a three-phase bridge rectifier module from Toshiba. It is designed for use in a wide range of applications such as motor control, power conditioning, and power supply.
Stock:2000
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Description: Toshiba MG75Q2YS50 is a 75A, 600V, N-Channel IGBT Module. Features: Low on-state voltage drop Low switching loss High speed switching High reliability Low noise High surge capabilit
Stock:2000
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The FS150R12KT3 is a three-phase insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in medium-voltage applications, such as motor drives, UPS systems, and re
Stock:2000
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MITSUBISHI CM400DY1-12E MODULE is a current limiting type PWM Inverter Module from the Mitsubishi series. It has a maximum rating of 400A and a 690V maximum operating voltage. This device is used to c
Stock:2000
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SKM75GB123D is a three-phase bridge rectifier module manufactured by Semikron. It is a 1200V, 75A module with a low forward voltage drop. It is suitable for use in applications such as motor drives, U
Stock:2000
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Description: BSM100GB60DLC is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: Maximum collector current of 100A Maximum collector-emitter voltage of 600V Low sa
Stock:2000
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MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Stock:2000
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The CM100DU-12F is a module manufactured by Mitsubishi. It is a 100A IGBT module with a maximum collector emitter voltage of 1200V. It is designed for use in inverter circuits and motor control applic
Stock:2000
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MODULE
Siemens
00+
IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes
Stock:2000
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Description: Toshiba MG25Q6ES42 is a 25A, 600V, N-channel IGBT module. Feature: Low on-state voltage drop High speed switching Low gate charge Low power loss High surge current capability High r
Stock:2000
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MODULE
Eupec
N/A
IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 15.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3; Housing: EasyPIM? 2;
Description: The FP15R12KE3 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a high-power module designed for use in motor control and power conversion applications.
Stock:2000
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Stock:2000
Minimum:1
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MODULE
Fairchil
15+
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Fairchild FSAM30SH60A is a 600V Fast Switching Diode Module that features high surge capability and low power losses. It is designed for use in switching applications such as motor control, welding an
Stock:2000
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Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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Stock:2000
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Description: The MG25J6ES40 is a 2.5-inch hard disk drive (HDD) module from Toshiba. Features: - Capacity: 250GB - Interface: SATA 6.0 Gb/s - Form Factor: 2.5-inch - Rotational Speed: 5400 RPM
Stock:2000
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company