MG300Q1US1
MODULE
INSULATED GATE BIPOLAR TRANSISTOR
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Home > Elec-component > Modules > IGBT
MODULE
IGBT Modules up to 1600V / 1700V Single; Package: AG-62MM-2; IC max: 400.0 A; VCEsat typ: 2.0 V; Configuration: Single Modules; Technology: IGBT3; Housing: 62 mm;
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SKM181 is a three-phase bridge rectifier module made by Semikron. It is designed for use in high power applications such as motor drives, UPS systems, and solar inverters. The module has a maximum
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MODULE
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SIMOPAC Module Power module Single switch FREDFET N channel Enhancement mode
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MODULE
Semikron
IGBT Modules up to 1200V Dual ; Package: AG-ECONOD-3; IC max: 300.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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Description: The BSM150GB170DLC is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a high-power module designed for use in motor control, UPS systems, and other industrial applica
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MG600Q1US51 is a 600V insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. It is designed for use in motor control applications such as inverters, servo drives, and UPS
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SKM40GD121D is a 1200V, 40A, three-phase IGBT module from Semikron. It is designed for high power applications such as motor drives, welding, UPS and solar inverters. Features: * Low inductance desig
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MODULE
Eupec
IGBT Modules up to 1200V Dual ; Package: AG-ECONOD-3; IC max: 450.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: EconoDUAL™ 3;
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MODULE
Eupdc
IGBT Modules up to 1200V Single; Package: AG-62MM-2; IC max: 400.0 A; VCEsat typ: 2.1 V; Configuration: Single Modules; Technology: IGBT2 Low Loss; Housing: 62 mm;
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SKM150GB124D is a module manufactured by Semikron. It is a three-phase bridge rectifier module with a voltage rating of 1200V and a current rating of 150A. It is designed for use in power converters,
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