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Product video Product Picture
QM50TX-H Transistor Module Medium Power Switching Use Insulated Type
  • QM50TX-H
  • QM50TX-H
  • QM50TX-H
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Description

Transistor Module Medium Power Switching Use Insulated Type

Not found, similar datasheet recommended

Title

Modules

  • ECAD Module
  • Manufacturer Part Number: QM50TX-H
  • Brand: Mitsubishi
  • Package / Case: MODULE
  • Category: Discrete Semiconductor
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • The QM50TX-H is a Mitsubishi inverter module. It is a 50 kW three-phase inverter module with a rated output of 50 kW and a rated voltage of 400 V. It is designed for use in motor control applications and is compatible with Mitsubishi's FR-A800 series inverters. The module features a built-in braking transistor, overcurrent protection, and overvoltage protection. It also has a built-in cooling fan and a built-in EMC filter. The module is designed for use in a wide range of applications, including pumps, fans, compressors, and other industrial machinery. (For reference only)

Introduction:

Transistors are, for the most part, simple types of active circuitry that can increase, or increase, the strength of electrical signals. They do this by transferring power, usually from a DC power source, to a signal. The operation of many transistor amplifier circuits can be accurately described as changing the power output of a power input signal in such a way that the output signal is a high-power replica of the input signal.

 

Core Parameters:

 UL recognized

 Insulated type

 Current of collector 50A

 Current gain DC 75

 

Circuit Diagram:

SupplierFile/202007/07/f_e6b543a6cc004bb6843fb37c7c90c1ca.png

Working:

Transistor performance depends on the pn junctions, produced by doping silicon with dirty atoms that provide either excess or lack of electrons in the interacting atoms of the atoms in the semiconductor crystal structure. Silicon forms a crystal structure in which each atom shares four electrons with its neighbor to form covalent bonds. These four electrons are in the outermost layer of each atom, and they are called valence electrons, and they form bonds. Doping imports atoms with three or five valence electrons in a crystal structure, and these atoms form bonds with silicon atoms either with or without a single electron or with one additional electron.

SupplierFile/202007/07/f_80bf22d02a6a41c39df77c49083a59ae.png

Applications:

 Welders

 Switch mode power supplies

 Uninterruptable power supply

 Motor controls AC & DC



Preview of the first 3 pages of the data sheet

  • QM50TX-H's pdf picture 1
  • QM50TX-H's pdf picture 2
  • QM50TX-H's pdf picture 3

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FTS1018 : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage.

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Product Reviews

    Submit

    241 buyer reviews from United Kingdom

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    Sarah Jackson

    QM50TX-H
    us United States

    Length of registration:7 years

    This integrated circuit is great! It was easy to install and I haven't had any issues with it. The performance is excellent and it's been a great addition to my system. Highly recommended!

    0

    0

    Reply0

    03/17/2023

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