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Description
Transistor Module Medium Power Switching Use Insulated Type
Title
Modules
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Preview of the first 3 pages of the data sheet
Some Part number from the same manufacture
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
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Same catergory
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2SC3678 : Amplifier. Silicon NPN Triple Diffused Planar Transistor. Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions 6typ 50typ B =5) Collector-Emitter Saturation Voltage C E (sa (V ) Base-Emitter Saturation Voltage E (s at) (V) 1 Without. 2SD1236 : . Applications Large current switching of relay drivers, high-speed inverters, converters. Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. Large current capacity. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation. 2SK3305-ZJ : Switching N-channel Power MOSFET Industrial Use. The 2SK3305 is N-Channel DMOS FET device that a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Low gate charge: 13 nC TYP. (VDD 400 V, VGS = 5.0 A) Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 1.5 MAX. (VGS = 2.5 A) Avalanche capability ratings. BC856BWT1 : General Purpose Transistors , Package: SC-70 (SOT-323), Pins=3. These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. Device Marking: = 3K Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO BC857 BC858 Unit V mAdc See Device. C10T03QL-11A : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 30 ;; Average Rectified Current(A) = 10 ;; Condition(cace or Ambient Temperature) = Tc=116 ;; Surge Forward Current(A) = 120 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.47 ;; Peak Forward Current(A) = 5 ;; Peak Reverse. FE6A : Glass Passivated. Glass Passivated Fast Efficient Rectifier Reverse Voltage - 50 to 200volts Forward Current - 6.0 Amperes. HER306 : High efficiency rectifier diodes. High Efficiency Rectifier Diodes. KN2907 : = General Purpose Transistor ;; Package = TO-92. OM400L60CMC : 600V 400A Chopper Hi-rel Cermod Igbt Power Module. OM400L60CMC (Tc= 25° C unless otherwise specified) Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V Gate Emitter Leakage Current, VCE=0V ON CHARACTERISTICS Gate Threshold Voltage, VCE=VGE, IC=6mA Collector Emitter Saturation Voltage, VGE=15V, IC=400A DYNAMIC CHARACTERISTICS. SML30EUZ03K : Screening Options Available = ;; Package = D2PAK (TO263AB) ;; Type = C3 Enhanced Ultrafast Diode ;; Voltage (V) = 300V ;; Current (A) = 30A ;; VF(cont) = 1.8V ;; Trr(typ) = 35ns. B4S-E3 : 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; RoHS Compliant: RoHS ; Package: LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4. EVU : RESISTOR, POTENTIOMETER, 1 TURN(S), 0.05 W, 1000 ohm - 2000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Mounting / Packaging: ThroughHole ; Operating Temperature: 0 to 70 C (32 to 158 F). UMN11TN : 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 6 ; Number of Diodes: 4. 1SS304-A : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 3 ; Number of Diodes: 2. 6.3NW72220FA5X7 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 6.3 V, 22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Capacitance Range: 22 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 10 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F). |
241 buyer reviews from United Kingdom
Brian Evans
Length of registration:7 years
I am very pleased with the quality of the QM20DX-H electronic component that I purchased from Utsource. The component is well-made and performs as expected. Thank you for providing such a great product.
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03/17/2023
Heriberto Hohlke
Length of registration:10 years
OK
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11/08/2016
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QM20DX-H
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