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1200V NPT Trench IGBT
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FGA25N120ANTD 1200 volts NBT Trench IGBT Description
It has advance NPT (non punch through) Technology. It exhibits property of superior conduction and switching performance. It offers high avalanche ruggedness and easy parallel operation. It comes in TO-3P package.
● It comes in following features
● It has NPT Trench Technology with positive temperature co-efficient
● It has low saturation voltage typically 2volts
● It has low switching loss typically 0.96milli Joules
● It has extremely enhanced avalanche capability
● It has common emitter voltage typically 1200volts
● It has gate emitter voltage typically 20volts
● It has collector current typically 50amperes
● It has pulsed collector current typically 75Amperes
● It has diode continuous forward current typically 25Amperes
● It has diode maximum forward current typically 150Amperes
● It has maximum power dissipation typically 312watts
● It has maximum lead temperature for soldering typically 300℃
● It has thermal resistance junction to case for IGBT typically 0.4℃/W
● It has thermal resistance junction to case for diode typically 2℃/W
● It has thermal resistance junction to ambient typically 40℃/W
● It has collector cut off current typically 3milli Amperes
● It has gate to emitter leakage current typically 250nano Amperes
● It has gate to emitter threshold voltage typically 7.5volts
● It has saturation voltage typically 2.15volts
● It has input capacitance typically 3700pico Farads
● It has reverse transfer capacitance typically 80pico Farads
● It has turn on delay time typically 50nano seconds
● It has rise time typically 90nano seconds
● It has fall time typically 180nano seconds
● It has turn off delay time typically 190nano seconds
● It has turn on switching loss typically 6.9milli Joules
● It has turn off switching loss typically 2.4milli Joules
● It has gate emitter charge typically 23nano Coulombs
● It has gate collector charge typically 150nano Coulombs
● It has diode forward voltage typically 2volts with current typically 25Amperes
● It has diode reverse recovery time typically 350nano seconds
● It has diode reverse recovery charge typically 4700nano coulombs
● It has diode peak reverse recovery current typically 40Amperes
It is used in following applications
Micro wave oven
The alternative of FGA25N120ANTD is GT20N135SRA
There is no equivalent IC for FGA25N120ANTD till now but in future there can be possibility to introduce IC with similar features.
Conclusion: This device is well suited for the resonant and soft switching applications like micro wave oven and induction heating.
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FGA25N120ANTD has several brands around the world that may have alternate names for FGA25N120ANTD due to regional differences or acquisition. FGA25N120ANTD may also be known as the following names:
Stock Status: 193759
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