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GT30J124

Category: IC Chips

Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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0.23803 1.21020

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Part Number Seller's Name Stock Brand Package/Case Date Code Description Price

GT30J124

GT30J124 has several brands around the world that may have alternate names for GT30J124 due to regional differences or acquisition. GT30J124 may also be known as the following names:

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    All sellers

    5

    Brand new

    5

    Certified preowned

    5

    Official

    5

    Third Party

    5

    Description

    Part Number Product Description Summary Price Buy

    Utsource

    66794

    5.0 out of 5 stars

    1 star 0.1%
    2 star 0%
    3 star 0.2%
    4 star 0.3%
    5 star 99.3%

    Total products: 2400114

    Total sales: 6689012

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:192597

    USED

    Toshiba

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.59508 £0.53557

    ≥5: £0.44631 £0.40168

    ≥10: £0.31241 £0.28117

    ≥20: £0.29754 £0.26778

    ≥50: £0.26779 £0.24101

    ≥100: £0.26035 £0.23431

    ≥200: £0.25291 £0.22762

    ≥500: £0.24547 £0.22092

    ≥1000: £0.23803 £0.21423

    More: Inquiry

    A XIAN Electronics Co., Ltd

    289

    5.0 out of 5 stars

    3 star 0.3%
    4 star 0.7%
    5 star 99%

    Total products: 2676

    Total sales: 13946

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:21250

    USED

    Toshiba/

    15+

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.80680 £0.75839

    More: Inquiry

    SENTE Electronics Co.,Ltd.

    144

    5.0 out of 5 stars

    3 star 0.7%
    5 star 99.3%

    Total products: 591

    Total sales: 7562

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:15212

    USED

    Toshiba

    20+

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.48408 £0.45503

    ≥51: £0.40340 £0.37920

    More: Inquiry

    SI LING YI Electronics Co.,Ltd.

    1

    5.0 out of 5 stars

    5 star 100%

    Total products: 542

    Total sales: 586

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:15298

    USED

    Toshiba

    17+

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.48408 £0.45503

    ≥51: £0.40340 £0.37920

    More: Inquiry

    Kokey Electronics Co.,Ltd.

    1911

    5.0 out of 5 stars

    1 star 0.1%
    3 star 0.2%
    4 star 0.4%
    5 star 99.3%

    Total products: 6978

    Total sales: 52507

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:1990

    USED

    Thomson

    13+

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £1.21020 £1.08918

    ≥10: £0.64544 £0.58090

    ≥50: £0.56476 £0.50828

    More: Inquiry

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:730

    USED

    Toshiba

    15

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.48408 £0.43567

    ≥10: £0.32272 £0.29045

    ≥50: £0.25818 £0.23236

    More: Inquiry

    Description

    The 30J124 Transil series has been designed to protect sensitive equipment against surges below 3000 W (10/1000 μs) and against electro-static discharges according to IEC 61000-4-2, and MIL STD 883, method 3015. The Planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. SMC30J are packaged in SMC (SMC footprint in accordance with IPC 7531 standard).

     

    Features

    ● Peak pulse power:– 3000 W (10/1000 μs)

    ● Stand off voltage range: from 5V to 33V

    ● Unidirectional and bidirectional types

    ● Low leakage current: 0.2 μA

    ● Operating Tj max: 150

    ● High power capability at Tj max:– 2200 W (10/1000 μs)

    ● JEDEC registered package outline


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    GT30J124

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