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GT30J124

Category: IC Chips

Description: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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0.27316 0.79671

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Part Number Seller's Name Stock Brand Package/Case Date Code Description Price

GT30J124

GT30J124 has several brands around the world that may have alternate names for GT30J124 due to regional differences or acquisition. GT30J124 may also be known as the following names:

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    Description

    Part Number Product Description Summary Price Buy

    Utsource

    66794

    5.0 out of 5 stars

    1 star 0.1%
    2 star 0%
    3 star 0.2%
    4 star 0.3%
    5 star 99.3%

    Total products: 2398060

    Total sales: 12728598

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:9999

    USED

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.68289 £0.61460

    ≥5: £0.51217 £0.46095

    ≥10: £0.35852 £0.32267

    ≥20: £0.34145 £0.30730

    ≥50: £0.30730 £0.27657

    ≥100: £0.29876 £0.26889

    ≥200: £0.29023 £0.26121

    ≥500: £0.28169 £0.25353

    ≥1000: £0.27316 £0.24584

    More: Inquiry

    A XIAN Electronics Co., Ltd

    291

    5.0 out of 5 stars

    3 star 0.3%
    4 star 0.7%
    5 star 99%

    Total products: 4128

    Total sales: 17938

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    GT30J124 TOSHIBA   Insulated   Gate   Bipolar   Transistor   Silicon  N  Channel   IGBT
    GT30J124

    Stock:21250

    USED

    15+

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    ≥1: £0.79671 £0.74890

    More: Inquiry

    Description

    The 30J124 Transil series has been designed to protect sensitive equipment against surges below 3000 W (10/1000 μs) and against electro-static discharges according to IEC 61000-4-2, and MIL STD 883, method 3015. The Planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. SMC30J are packaged in SMC (SMC footprint in accordance with IPC 7531 standard).

     

    Features

    ● Peak pulse power:– 3000 W (10/1000 μs)

    ● Stand off voltage range: from 5V to 33V

    ● Unidirectional and bidirectional types

    ● Low leakage current: 0.2 μA

    ● Operating Tj max: 150

    ● High power capability at Tj max:– 2200 W (10/1000 μs)

    ● JEDEC registered package outline


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    GT30J124

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